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Lasing with Pumping Levels of Si Nanocrystals on Silicon Wafer

It is reported that the silicon nanocrystals (NCs) are fabricated by using self-assembly growth method with the annealing and the electron beam irradiation processes in the pulsed laser depositing, on which the visible lasing with higher gain (over 130 cm(−1)) and the enhanced emission in optical te...

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Autores principales: Huang, Wei-Qi, Liu, Shi-Rong, Huang, Zhong-Mei, Wu, Xue-Ke, Qin, Chao-Jian, Zhuang, Qian-Dong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5110452/
https://www.ncbi.nlm.nih.gov/pubmed/27848235
http://dx.doi.org/10.1186/s11671-016-1707-z
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author Huang, Wei-Qi
Liu, Shi-Rong
Huang, Zhong-Mei
Wu, Xue-Ke
Qin, Chao-Jian
Zhuang, Qian-Dong
author_facet Huang, Wei-Qi
Liu, Shi-Rong
Huang, Zhong-Mei
Wu, Xue-Ke
Qin, Chao-Jian
Zhuang, Qian-Dong
author_sort Huang, Wei-Qi
collection PubMed
description It is reported that the silicon nanocrystals (NCs) are fabricated by using self-assembly growth method with the annealing and the electron beam irradiation processes in the pulsed laser depositing, on which the visible lasing with higher gain (over 130 cm(−1)) and the enhanced emission in optical telecommunication window are measured in photoluminescence (PL). It is interesting that the enhanced visible electroluminescence (EL) on silicon nanocrystals (Si-NCs) is obviously observed by the naked eyes, and the light-emitting diode (LED) of the Si-NCs with external quantum efficiency of 20% is made on silicon chip in our laboratory. A four-level system is built for emission model in nanosilicon, in which the PL and EL measurement and transmission electron microscope (TEM) analysis demonstrate that the pumping levels with shorter lifetime from the rising energy of the Si quantum dots due to the quantum confinement effect occur, and the electronic localized states with longer lifetime owing to impurities bonding on Si-NCs surface are formed in the crystallized process to produce the inversion of population for lasing, where the optical gain is generated.
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spelling pubmed-51104522016-12-02 Lasing with Pumping Levels of Si Nanocrystals on Silicon Wafer Huang, Wei-Qi Liu, Shi-Rong Huang, Zhong-Mei Wu, Xue-Ke Qin, Chao-Jian Zhuang, Qian-Dong Nanoscale Res Lett Nano Express It is reported that the silicon nanocrystals (NCs) are fabricated by using self-assembly growth method with the annealing and the electron beam irradiation processes in the pulsed laser depositing, on which the visible lasing with higher gain (over 130 cm(−1)) and the enhanced emission in optical telecommunication window are measured in photoluminescence (PL). It is interesting that the enhanced visible electroluminescence (EL) on silicon nanocrystals (Si-NCs) is obviously observed by the naked eyes, and the light-emitting diode (LED) of the Si-NCs with external quantum efficiency of 20% is made on silicon chip in our laboratory. A four-level system is built for emission model in nanosilicon, in which the PL and EL measurement and transmission electron microscope (TEM) analysis demonstrate that the pumping levels with shorter lifetime from the rising energy of the Si quantum dots due to the quantum confinement effect occur, and the electronic localized states with longer lifetime owing to impurities bonding on Si-NCs surface are formed in the crystallized process to produce the inversion of population for lasing, where the optical gain is generated. Springer US 2016-11-15 /pmc/articles/PMC5110452/ /pubmed/27848235 http://dx.doi.org/10.1186/s11671-016-1707-z Text en © The Author(s). 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Huang, Wei-Qi
Liu, Shi-Rong
Huang, Zhong-Mei
Wu, Xue-Ke
Qin, Chao-Jian
Zhuang, Qian-Dong
Lasing with Pumping Levels of Si Nanocrystals on Silicon Wafer
title Lasing with Pumping Levels of Si Nanocrystals on Silicon Wafer
title_full Lasing with Pumping Levels of Si Nanocrystals on Silicon Wafer
title_fullStr Lasing with Pumping Levels of Si Nanocrystals on Silicon Wafer
title_full_unstemmed Lasing with Pumping Levels of Si Nanocrystals on Silicon Wafer
title_short Lasing with Pumping Levels of Si Nanocrystals on Silicon Wafer
title_sort lasing with pumping levels of si nanocrystals on silicon wafer
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5110452/
https://www.ncbi.nlm.nih.gov/pubmed/27848235
http://dx.doi.org/10.1186/s11671-016-1707-z
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