Atomic Layering, Intermixing and Switching Mechanism in Ge-Sb-Te based Chalcogenide Superlattices

GeSbTe-based chalcogenide superlattice (CSLs) phase-change memories consist of GeSbTe layer blocks separated by van der Waals bonding gaps. Recent high resolution electron microscopy found two types of disorder in CSLs, a chemical disorder within individual layers, and SbTe bilayer stacking faults c...

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Detalles Bibliográficos
Autores principales: Yu, Xiaoming, Robertson, John
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5112535/
https://www.ncbi.nlm.nih.gov/pubmed/27853289
http://dx.doi.org/10.1038/srep37325

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5112535/
https://www.ncbi.nlm.nih.gov/pubmed/27853289
http://dx.doi.org/10.1038/srep37325

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