Flexible Devices: Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters (Adv. Sci. 1/2016)

Novel, P‐doped, flexible SiC field emitters, with both low turn‐on fields and extremely high current emission stability are demonstrated by W. Y. Yang, X. S. Fang, and co‐workers in article number 1500256. The high stability under high temperatures and extreme bending conditions opens up practical a...

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Detalles Bibliográficos
Autores principales: Chen, Shanliang, Shang, Minghui, Gao, Fengmei, Wang, Lin, Ying, Pengzhan, Yang, Weiyou, Fang, Xiaosheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2016
Materias:
Inside Front Cover
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5115500/
http://dx.doi.org/10.1002/advs.201670002
Descripción
Sumario:Novel, P‐doped, flexible SiC field emitters, with both low turn‐on fields and extremely high current emission stability are demonstrated by W. Y. Yang, X. S. Fang, and co‐workers in article number 1500256. The high stability under high temperatures and extreme bending conditions opens up practical applications for SiC field emitters in flexible nanodevices. [Image: see text]

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