Flexible Devices: Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters (Adv. Sci. 1/2016)

Novel, P‐doped, flexible SiC field emitters, with both low turn‐on fields and extremely high current emission stability are demonstrated by W. Y. Yang, X. S. Fang, and co‐workers in article number 1500256. The high stability under high temperatures and extreme bending conditions opens up practical a...

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Detalles Bibliográficos
Autores principales: Chen, Shanliang, Shang, Minghui, Gao, Fengmei, Wang, Lin, Ying, Pengzhan, Yang, Weiyou, Fang, Xiaosheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2016
Materias:
Inside Front Cover
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5115500/
http://dx.doi.org/10.1002/advs.201670002
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author Chen, Shanliang
Shang, Minghui
Gao, Fengmei
Wang, Lin
Ying, Pengzhan
Yang, Weiyou
Fang, Xiaosheng
author_facet Chen, Shanliang
Shang, Minghui
Gao, Fengmei
Wang, Lin
Ying, Pengzhan
Yang, Weiyou
Fang, Xiaosheng
author_sort Chen, Shanliang
collection PubMed
description Novel, P‐doped, flexible SiC field emitters, with both low turn‐on fields and extremely high current emission stability are demonstrated by W. Y. Yang, X. S. Fang, and co‐workers in article number 1500256. The high stability under high temperatures and extreme bending conditions opens up practical applications for SiC field emitters in flexible nanodevices. [Image: see text]
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spelling pubmed-51155002016-12-15 Flexible Devices: Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters (Adv. Sci. 1/2016) Chen, Shanliang Shang, Minghui Gao, Fengmei Wang, Lin Ying, Pengzhan Yang, Weiyou Fang, Xiaosheng Adv Sci (Weinh) Inside Front Cover Novel, P‐doped, flexible SiC field emitters, with both low turn‐on fields and extremely high current emission stability are demonstrated by W. Y. Yang, X. S. Fang, and co‐workers in article number 1500256. The high stability under high temperatures and extreme bending conditions opens up practical applications for SiC field emitters in flexible nanodevices. [Image: see text] John Wiley and Sons Inc. 2016-01-13 /pmc/articles/PMC5115500/ http://dx.doi.org/10.1002/advs.201670002 Text en © 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim https://creativecommons.org/licenses/by-nc/4.0/This is an open access article under the terms of the Creative Commons Attribution‐NonCommercial (https://creativecommons.org/licenses/by-nc/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.
spellingShingle Inside Front Cover
Chen, Shanliang
Shang, Minghui
Gao, Fengmei
Wang, Lin
Ying, Pengzhan
Yang, Weiyou
Fang, Xiaosheng
Flexible Devices: Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters (Adv. Sci. 1/2016)
title Flexible Devices: Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters (Adv. Sci. 1/2016)
title_full Flexible Devices: Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters (Adv. Sci. 1/2016)
title_fullStr Flexible Devices: Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters (Adv. Sci. 1/2016)
title_full_unstemmed Flexible Devices: Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters (Adv. Sci. 1/2016)
title_short Flexible Devices: Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters (Adv. Sci. 1/2016)
title_sort flexible devices: extremely stable current emission of p‐doped sic flexible field emitters (adv. sci. 1/2016)
topic Inside Front Cover
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5115500/
http://dx.doi.org/10.1002/advs.201670002
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