Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN

In this study, effects of the thickness of a low temperature (LT) buffer and impurity incorporation on the characteristics of Nitrogen (N)-polar GaN are investigated. By using either a nitridation or thermal annealing step before the deposition of a LT buffer, three N-polar GaN samples with differen...

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Detalles Bibliográficos
Autores principales: Yang, Fann-Wei, Chen, Yu-Yu, Feng, Shih-Wei, Sun, Qian, Han, Jung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5116017/
https://www.ncbi.nlm.nih.gov/pubmed/27864818
http://dx.doi.org/10.1186/s11671-016-1727-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5116017/
https://www.ncbi.nlm.nih.gov/pubmed/27864818
http://dx.doi.org/10.1186/s11671-016-1727-8

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