Anisotropic Strain Induced Directional Metallicity in Highly Epitaxial LaBaCo(2)O(5.5+δ) Thin Films on (110) NdGaO(3)

Highly directional-dependent metal-insulator transition is observed in epitaxial double perovskite LaBaCo(2)O(5.5+δ) films. The film exhibit metallic along [100], but remain semiconducting along [010] under application of a magnetic field parallel to the surface of the film. The physical origin for...

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Detalles Bibliográficos
Autores principales: Ma, Chunrui, Han, Dong, Liu, Ming, Collins, Gregory, Wang, Haibin, Xu, Xing, Lin, Yuan, Jiang, Jiechao, Zhang, Shengbai, Chen, Chonglin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5116752/
https://www.ncbi.nlm.nih.gov/pubmed/27869137
http://dx.doi.org/10.1038/srep37337
Descripción
Sumario:Highly directional-dependent metal-insulator transition is observed in epitaxial double perovskite LaBaCo(2)O(5.5+δ) films. The film exhibit metallic along [100], but remain semiconducting along [010] under application of a magnetic field parallel to the surface of the film. The physical origin for the properties is identified as in-plane tensile strain arising from oxygen vacancies. First-principle calculations suggested the tensile strain drastically alters the band gap, and the vanishing gap opens up [100] conduction channels for Fermi-surface electrons. Our observation of strain-induced highly directional-dependent metal-insulator transition may open up new dimension for multifunctional devices.

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