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Direct comparison of current-induced spin polarization in topological insulator Bi(2)Se(3) and InAs Rashba states
Three-dimensional topological insulators (TIs) exhibit time-reversal symmetry protected, linearly dispersing Dirac surface states with spin–momentum locking. Band bending at the TI surface may also lead to coexisting trivial two-dimensional electron gas (2DEG) states with parabolic energy dispersion...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5118552/ https://www.ncbi.nlm.nih.gov/pubmed/27853143 http://dx.doi.org/10.1038/ncomms13518 |
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author | Li, C. H. van ‘t Erve, O.M.J. Rajput, S. Li, L. Jonker, B. T. |
author_facet | Li, C. H. van ‘t Erve, O.M.J. Rajput, S. Li, L. Jonker, B. T. |
author_sort | Li, C. H. |
collection | PubMed |
description | Three-dimensional topological insulators (TIs) exhibit time-reversal symmetry protected, linearly dispersing Dirac surface states with spin–momentum locking. Band bending at the TI surface may also lead to coexisting trivial two-dimensional electron gas (2DEG) states with parabolic energy dispersion. A bias current is expected to generate spin polarization in both systems, although with different magnitude and sign. Here we compare spin potentiometric measurements of bias current-generated spin polarization in Bi(2)Se(3)(111) where Dirac surface states coexist with trivial 2DEG states, and in InAs(001) where only trivial 2DEG states are present. We observe spin polarization arising from spin–momentum locking in both cases, with opposite signs of the measured spin voltage. We present a model based on spin dependent electrochemical potentials to directly derive the sign expected for the Dirac surface states, and show that the dominant contribution to the current-generated spin polarization in the TI is from the Dirac surface states. |
format | Online Article Text |
id | pubmed-5118552 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-51185522016-12-02 Direct comparison of current-induced spin polarization in topological insulator Bi(2)Se(3) and InAs Rashba states Li, C. H. van ‘t Erve, O.M.J. Rajput, S. Li, L. Jonker, B. T. Nat Commun Article Three-dimensional topological insulators (TIs) exhibit time-reversal symmetry protected, linearly dispersing Dirac surface states with spin–momentum locking. Band bending at the TI surface may also lead to coexisting trivial two-dimensional electron gas (2DEG) states with parabolic energy dispersion. A bias current is expected to generate spin polarization in both systems, although with different magnitude and sign. Here we compare spin potentiometric measurements of bias current-generated spin polarization in Bi(2)Se(3)(111) where Dirac surface states coexist with trivial 2DEG states, and in InAs(001) where only trivial 2DEG states are present. We observe spin polarization arising from spin–momentum locking in both cases, with opposite signs of the measured spin voltage. We present a model based on spin dependent electrochemical potentials to directly derive the sign expected for the Dirac surface states, and show that the dominant contribution to the current-generated spin polarization in the TI is from the Dirac surface states. Nature Publishing Group 2016-11-17 /pmc/articles/PMC5118552/ /pubmed/27853143 http://dx.doi.org/10.1038/ncomms13518 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Li, C. H. van ‘t Erve, O.M.J. Rajput, S. Li, L. Jonker, B. T. Direct comparison of current-induced spin polarization in topological insulator Bi(2)Se(3) and InAs Rashba states |
title | Direct comparison of current-induced spin polarization in topological insulator Bi(2)Se(3) and InAs Rashba states |
title_full | Direct comparison of current-induced spin polarization in topological insulator Bi(2)Se(3) and InAs Rashba states |
title_fullStr | Direct comparison of current-induced spin polarization in topological insulator Bi(2)Se(3) and InAs Rashba states |
title_full_unstemmed | Direct comparison of current-induced spin polarization in topological insulator Bi(2)Se(3) and InAs Rashba states |
title_short | Direct comparison of current-induced spin polarization in topological insulator Bi(2)Se(3) and InAs Rashba states |
title_sort | direct comparison of current-induced spin polarization in topological insulator bi(2)se(3) and inas rashba states |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5118552/ https://www.ncbi.nlm.nih.gov/pubmed/27853143 http://dx.doi.org/10.1038/ncomms13518 |
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