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New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping

We report the discovery of a new fluoride-arsenide bulk diluted magnetic semiconductor (Ba,K)F(Zn,Mn)As with the tetragonal ZrCuSiAs-type structure which is identical to that of the “1111” iron-based superconductors. The joint hole doping via (Ba,K) substitution & spin doping via (Zn,Mn) substit...

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Detalles Bibliográficos
Autores principales: Chen, Bijuan, Deng, Zheng, Li, Wenmin, Gao, Moran, Liu, Qingqing, Gu, C. Z., Hu, F. X., Shen, B. G., Frandsen, Benjamin, Cheung, Sky, Lian, Liu, Uemura, Yasutomo J., Ding, Cui, Guo, Shengli, Ning, Fanlong, Munsie, Timothy J. S., Wilson, Murray Neff, Cai, Yipeng, Luke, Graeme, Guguchia, Zurab, Yonezawa, Shingo, Li, Zhi, Jin, Changqing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5118802/
https://www.ncbi.nlm.nih.gov/pubmed/27874044
http://dx.doi.org/10.1038/srep36578
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author Chen, Bijuan
Deng, Zheng
Li, Wenmin
Gao, Moran
Liu, Qingqing
Gu, C. Z.
Hu, F. X.
Shen, B. G.
Frandsen, Benjamin
Cheung, Sky
Lian, Liu
Uemura, Yasutomo J.
Ding, Cui
Guo, Shengli
Ning, Fanlong
Munsie, Timothy J. S.
Wilson, Murray Neff
Cai, Yipeng
Luke, Graeme
Guguchia, Zurab
Yonezawa, Shingo
Li, Zhi
Jin, Changqing
author_facet Chen, Bijuan
Deng, Zheng
Li, Wenmin
Gao, Moran
Liu, Qingqing
Gu, C. Z.
Hu, F. X.
Shen, B. G.
Frandsen, Benjamin
Cheung, Sky
Lian, Liu
Uemura, Yasutomo J.
Ding, Cui
Guo, Shengli
Ning, Fanlong
Munsie, Timothy J. S.
Wilson, Murray Neff
Cai, Yipeng
Luke, Graeme
Guguchia, Zurab
Yonezawa, Shingo
Li, Zhi
Jin, Changqing
author_sort Chen, Bijuan
collection PubMed
description We report the discovery of a new fluoride-arsenide bulk diluted magnetic semiconductor (Ba,K)F(Zn,Mn)As with the tetragonal ZrCuSiAs-type structure which is identical to that of the “1111” iron-based superconductors. The joint hole doping via (Ba,K) substitution & spin doping via (Zn,Mn) substitution results in ferromagnetic order with Curie temperature up to 30 K and demonstrates that the ferromagnetic interactions between the localized spins are mediated by the carriers. Muon spin relaxation measurements confirm the intrinsic nature of the long range magnetic order in the entire volume in the ferromagnetic phase. This is the first time that a diluted magnetic semiconductor with decoupled spin and charge doping is achieved in a fluoride compound. Comparing to the isostructure oxide counterpart of LaOZnSb, the fluoride DMS (Ba,K)F(Zn,Mn)As shows much improved semiconductive behavior that would be benefit for further application developments.
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spelling pubmed-51188022016-11-28 New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping Chen, Bijuan Deng, Zheng Li, Wenmin Gao, Moran Liu, Qingqing Gu, C. Z. Hu, F. X. Shen, B. G. Frandsen, Benjamin Cheung, Sky Lian, Liu Uemura, Yasutomo J. Ding, Cui Guo, Shengli Ning, Fanlong Munsie, Timothy J. S. Wilson, Murray Neff Cai, Yipeng Luke, Graeme Guguchia, Zurab Yonezawa, Shingo Li, Zhi Jin, Changqing Sci Rep Article We report the discovery of a new fluoride-arsenide bulk diluted magnetic semiconductor (Ba,K)F(Zn,Mn)As with the tetragonal ZrCuSiAs-type structure which is identical to that of the “1111” iron-based superconductors. The joint hole doping via (Ba,K) substitution & spin doping via (Zn,Mn) substitution results in ferromagnetic order with Curie temperature up to 30 K and demonstrates that the ferromagnetic interactions between the localized spins are mediated by the carriers. Muon spin relaxation measurements confirm the intrinsic nature of the long range magnetic order in the entire volume in the ferromagnetic phase. This is the first time that a diluted magnetic semiconductor with decoupled spin and charge doping is achieved in a fluoride compound. Comparing to the isostructure oxide counterpart of LaOZnSb, the fluoride DMS (Ba,K)F(Zn,Mn)As shows much improved semiconductive behavior that would be benefit for further application developments. Nature Publishing Group 2016-11-22 /pmc/articles/PMC5118802/ /pubmed/27874044 http://dx.doi.org/10.1038/srep36578 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Chen, Bijuan
Deng, Zheng
Li, Wenmin
Gao, Moran
Liu, Qingqing
Gu, C. Z.
Hu, F. X.
Shen, B. G.
Frandsen, Benjamin
Cheung, Sky
Lian, Liu
Uemura, Yasutomo J.
Ding, Cui
Guo, Shengli
Ning, Fanlong
Munsie, Timothy J. S.
Wilson, Murray Neff
Cai, Yipeng
Luke, Graeme
Guguchia, Zurab
Yonezawa, Shingo
Li, Zhi
Jin, Changqing
New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping
title New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping
title_full New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping
title_fullStr New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping
title_full_unstemmed New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping
title_short New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping
title_sort new fluoride-arsenide diluted magnetic semiconductor (ba,k)f(zn,mn)as with independent spin and charge doping
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5118802/
https://www.ncbi.nlm.nih.gov/pubmed/27874044
http://dx.doi.org/10.1038/srep36578
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