Redefining the Speed Limit of Phase Change Memory Revealed by Time-resolved Steep Threshold-Switching Dynamics of AgInSbTe Devices

Although phase-change memory (PCM) offers promising features for a ‘universal memory’ owing to high-speed and non-volatility, achieving fast electrical switching remains a key challenge. In this work, a correlation between the rate of applied voltage and the dynamics of threshold-switching is invest...

Descripción completa

Detalles Bibliográficos
Autores principales: Shukla, Krishna Dayal, Saxena, Nishant, Durai, Suresh, Manivannan, Anbarasu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5122954/
https://www.ncbi.nlm.nih.gov/pubmed/27886266
http://dx.doi.org/10.1038/srep37868

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5122954/
https://www.ncbi.nlm.nih.gov/pubmed/27886266
http://dx.doi.org/10.1038/srep37868

Ejemplares similares