Observation of Quantum Size Effect from Silicon Nanowall

We developed a fabrication technique of very thin silicon nanowall structures. The minimum width of the fabricated silicon nanowall structures was about 3 nm. This thinnest region of the silicon nanowall structures was investigated by using cathode luminescence and ultraviolet photoelectron spectros...

Descripción completa

Detalles Bibliográficos
Autores principales: Kanematsu, Daiji, Yoshiba, Shuhei, Hirai, Masakazu, Terakawa, Akira, Tanaka, Makoto, Ichikawa, Yukimi, Miyajima, Shinsuke, Konagai, Makoto
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5126036/
https://www.ncbi.nlm.nih.gov/pubmed/27896792
http://dx.doi.org/10.1186/s11671-016-1743-8
Descripción
Sumario:We developed a fabrication technique of very thin silicon nanowall structures. The minimum width of the fabricated silicon nanowall structures was about 3 nm. This thinnest region of the silicon nanowall structures was investigated by using cathode luminescence and ultraviolet photoelectron spectroscopy (UPS). The UPS measurements revealed that the density of states (DOS) of the thinnest region showed a stepwise shape which is completely different from that of the bulk Si. Theoretical analysis clearly demonstrated that this change of the DOS shape was due to the quantum size effect.

Ejemplares similares