Observation of Quantum Size Effect from Silicon Nanowall

We developed a fabrication technique of very thin silicon nanowall structures. The minimum width of the fabricated silicon nanowall structures was about 3 nm. This thinnest region of the silicon nanowall structures was investigated by using cathode luminescence and ultraviolet photoelectron spectros...

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Autores principales: Kanematsu, Daiji, Yoshiba, Shuhei, Hirai, Masakazu, Terakawa, Akira, Tanaka, Makoto, Ichikawa, Yukimi, Miyajima, Shinsuke, Konagai, Makoto
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5126036/
https://www.ncbi.nlm.nih.gov/pubmed/27896792
http://dx.doi.org/10.1186/s11671-016-1743-8
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author Kanematsu, Daiji
Yoshiba, Shuhei
Hirai, Masakazu
Terakawa, Akira
Tanaka, Makoto
Ichikawa, Yukimi
Miyajima, Shinsuke
Konagai, Makoto
author_facet Kanematsu, Daiji
Yoshiba, Shuhei
Hirai, Masakazu
Terakawa, Akira
Tanaka, Makoto
Ichikawa, Yukimi
Miyajima, Shinsuke
Konagai, Makoto
author_sort Kanematsu, Daiji
collection PubMed
description We developed a fabrication technique of very thin silicon nanowall structures. The minimum width of the fabricated silicon nanowall structures was about 3 nm. This thinnest region of the silicon nanowall structures was investigated by using cathode luminescence and ultraviolet photoelectron spectroscopy (UPS). The UPS measurements revealed that the density of states (DOS) of the thinnest region showed a stepwise shape which is completely different from that of the bulk Si. Theoretical analysis clearly demonstrated that this change of the DOS shape was due to the quantum size effect.
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spelling pubmed-51260362016-12-19 Observation of Quantum Size Effect from Silicon Nanowall Kanematsu, Daiji Yoshiba, Shuhei Hirai, Masakazu Terakawa, Akira Tanaka, Makoto Ichikawa, Yukimi Miyajima, Shinsuke Konagai, Makoto Nanoscale Res Lett Nano Express We developed a fabrication technique of very thin silicon nanowall structures. The minimum width of the fabricated silicon nanowall structures was about 3 nm. This thinnest region of the silicon nanowall structures was investigated by using cathode luminescence and ultraviolet photoelectron spectroscopy (UPS). The UPS measurements revealed that the density of states (DOS) of the thinnest region showed a stepwise shape which is completely different from that of the bulk Si. Theoretical analysis clearly demonstrated that this change of the DOS shape was due to the quantum size effect. Springer US 2016-11-29 /pmc/articles/PMC5126036/ /pubmed/27896792 http://dx.doi.org/10.1186/s11671-016-1743-8 Text en © The Author(s). 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Kanematsu, Daiji
Yoshiba, Shuhei
Hirai, Masakazu
Terakawa, Akira
Tanaka, Makoto
Ichikawa, Yukimi
Miyajima, Shinsuke
Konagai, Makoto
Observation of Quantum Size Effect from Silicon Nanowall
title Observation of Quantum Size Effect from Silicon Nanowall
title_full Observation of Quantum Size Effect from Silicon Nanowall
title_fullStr Observation of Quantum Size Effect from Silicon Nanowall
title_full_unstemmed Observation of Quantum Size Effect from Silicon Nanowall
title_short Observation of Quantum Size Effect from Silicon Nanowall
title_sort observation of quantum size effect from silicon nanowall
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5126036/
https://www.ncbi.nlm.nih.gov/pubmed/27896792
http://dx.doi.org/10.1186/s11671-016-1743-8
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