Metal Induced Growth of Transition Metal Dichalcogenides at Controlled Locations

Metal induced nucleation is adopted to achieve the growth of transition metal dichalcogenides at controlled locations. Ordered arrays of MoS(2) and WS(2) have successfully been fabricated on SiO(2) substrates by using the patterned Pt/Ti dots as the nucleation sites. Uniform MoS(2) monolayers with t...

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Autores principales: Wang, Zhendong, Huang, Qi, Chen, Peng, Guo, Shouhui, Liu, Xiaoqing, Liang, Xuelei, Wang, Li
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5133539/
https://www.ncbi.nlm.nih.gov/pubmed/27910917
http://dx.doi.org/10.1038/srep38394
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author Wang, Zhendong
Huang, Qi
Chen, Peng
Guo, Shouhui
Liu, Xiaoqing
Liang, Xuelei
Wang, Li
author_facet Wang, Zhendong
Huang, Qi
Chen, Peng
Guo, Shouhui
Liu, Xiaoqing
Liang, Xuelei
Wang, Li
author_sort Wang, Zhendong
collection PubMed
description Metal induced nucleation is adopted to achieve the growth of transition metal dichalcogenides at controlled locations. Ordered arrays of MoS(2) and WS(2) have successfully been fabricated on SiO(2) substrates by using the patterned Pt/Ti dots as the nucleation sites. Uniform MoS(2) monolayers with the adjustable size up to 50 μm are grown surrounding these metal patterns and the mobility of such layer is about 0.86 cm(2)/V·s. The crystalline flakes of WS(2) are also fabricated extending from the metal patterns and the electron mobility of these flakes is up to 11.36 cm(2)/V·s.
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spelling pubmed-51335392017-01-27 Metal Induced Growth of Transition Metal Dichalcogenides at Controlled Locations Wang, Zhendong Huang, Qi Chen, Peng Guo, Shouhui Liu, Xiaoqing Liang, Xuelei Wang, Li Sci Rep Article Metal induced nucleation is adopted to achieve the growth of transition metal dichalcogenides at controlled locations. Ordered arrays of MoS(2) and WS(2) have successfully been fabricated on SiO(2) substrates by using the patterned Pt/Ti dots as the nucleation sites. Uniform MoS(2) monolayers with the adjustable size up to 50 μm are grown surrounding these metal patterns and the mobility of such layer is about 0.86 cm(2)/V·s. The crystalline flakes of WS(2) are also fabricated extending from the metal patterns and the electron mobility of these flakes is up to 11.36 cm(2)/V·s. Nature Publishing Group 2016-12-02 /pmc/articles/PMC5133539/ /pubmed/27910917 http://dx.doi.org/10.1038/srep38394 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Wang, Zhendong
Huang, Qi
Chen, Peng
Guo, Shouhui
Liu, Xiaoqing
Liang, Xuelei
Wang, Li
Metal Induced Growth of Transition Metal Dichalcogenides at Controlled Locations
title Metal Induced Growth of Transition Metal Dichalcogenides at Controlled Locations
title_full Metal Induced Growth of Transition Metal Dichalcogenides at Controlled Locations
title_fullStr Metal Induced Growth of Transition Metal Dichalcogenides at Controlled Locations
title_full_unstemmed Metal Induced Growth of Transition Metal Dichalcogenides at Controlled Locations
title_short Metal Induced Growth of Transition Metal Dichalcogenides at Controlled Locations
title_sort metal induced growth of transition metal dichalcogenides at controlled locations
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5133539/
https://www.ncbi.nlm.nih.gov/pubmed/27910917
http://dx.doi.org/10.1038/srep38394
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