Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b′]dithiophene

A new phenacene-type molecule with five fused aromatic rings was synthesized: 2,7-didodecylphenanthro[2,1-b:7,8-b′]dithiophene ((C(12)H(25))(2)-i-PDT), with two terminal thiophene rings. Field-effect transistors (FETs) using thin films of this molecule were fabricated using various gate dielectrics,...

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Detalles Bibliográficos
Autores principales: Kubozono, Yoshihiro, Hyodo, Keita, Hamao, Shino, Shimo, Yuma, Mori, Hiroki, Nishihara, Yasushi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5138603/
https://www.ncbi.nlm.nih.gov/pubmed/27922104
http://dx.doi.org/10.1038/srep38535
Descripción
Sumario:A new phenacene-type molecule with five fused aromatic rings was synthesized: 2,7-didodecylphenanthro[2,1-b:7,8-b′]dithiophene ((C(12)H(25))(2)-i-PDT), with two terminal thiophene rings. Field-effect transistors (FETs) using thin films of this molecule were fabricated using various gate dielectrics, showing p-channel normally-off FET properties with field-effect mobilities (μ) greater than 1 cm(2) V(−1) s(−1). The highest μ value in the thin-film FETs fabricated in this study was 5.4 cm(2) V(−1) s(−1), when a 150 nm-thick ZrO(2) gate dielectric was used. This implies that (C(12)H(25))(2)-i-PDT is very suitable for use in a transistor. Its good FET performance is fully discussed, based on electronic/topological properties and theoretical calculations.

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