Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b′]dithiophene

A new phenacene-type molecule with five fused aromatic rings was synthesized: 2,7-didodecylphenanthro[2,1-b:7,8-b′]dithiophene ((C(12)H(25))(2)-i-PDT), with two terminal thiophene rings. Field-effect transistors (FETs) using thin films of this molecule were fabricated using various gate dielectrics,...

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Autores principales: Kubozono, Yoshihiro, Hyodo, Keita, Hamao, Shino, Shimo, Yuma, Mori, Hiroki, Nishihara, Yasushi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5138603/
https://www.ncbi.nlm.nih.gov/pubmed/27922104
http://dx.doi.org/10.1038/srep38535
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author Kubozono, Yoshihiro
Hyodo, Keita
Hamao, Shino
Shimo, Yuma
Mori, Hiroki
Nishihara, Yasushi
author_facet Kubozono, Yoshihiro
Hyodo, Keita
Hamao, Shino
Shimo, Yuma
Mori, Hiroki
Nishihara, Yasushi
author_sort Kubozono, Yoshihiro
collection PubMed
description A new phenacene-type molecule with five fused aromatic rings was synthesized: 2,7-didodecylphenanthro[2,1-b:7,8-b′]dithiophene ((C(12)H(25))(2)-i-PDT), with two terminal thiophene rings. Field-effect transistors (FETs) using thin films of this molecule were fabricated using various gate dielectrics, showing p-channel normally-off FET properties with field-effect mobilities (μ) greater than 1 cm(2) V(−1) s(−1). The highest μ value in the thin-film FETs fabricated in this study was 5.4 cm(2) V(−1) s(−1), when a 150 nm-thick ZrO(2) gate dielectric was used. This implies that (C(12)H(25))(2)-i-PDT is very suitable for use in a transistor. Its good FET performance is fully discussed, based on electronic/topological properties and theoretical calculations.
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spelling pubmed-51386032016-12-16 Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b′]dithiophene Kubozono, Yoshihiro Hyodo, Keita Hamao, Shino Shimo, Yuma Mori, Hiroki Nishihara, Yasushi Sci Rep Article A new phenacene-type molecule with five fused aromatic rings was synthesized: 2,7-didodecylphenanthro[2,1-b:7,8-b′]dithiophene ((C(12)H(25))(2)-i-PDT), with two terminal thiophene rings. Field-effect transistors (FETs) using thin films of this molecule were fabricated using various gate dielectrics, showing p-channel normally-off FET properties with field-effect mobilities (μ) greater than 1 cm(2) V(−1) s(−1). The highest μ value in the thin-film FETs fabricated in this study was 5.4 cm(2) V(−1) s(−1), when a 150 nm-thick ZrO(2) gate dielectric was used. This implies that (C(12)H(25))(2)-i-PDT is very suitable for use in a transistor. Its good FET performance is fully discussed, based on electronic/topological properties and theoretical calculations. Nature Publishing Group 2016-12-06 /pmc/articles/PMC5138603/ /pubmed/27922104 http://dx.doi.org/10.1038/srep38535 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Kubozono, Yoshihiro
Hyodo, Keita
Hamao, Shino
Shimo, Yuma
Mori, Hiroki
Nishihara, Yasushi
Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b′]dithiophene
title Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b′]dithiophene
title_full Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b′]dithiophene
title_fullStr Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b′]dithiophene
title_full_unstemmed Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b′]dithiophene
title_short Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b′]dithiophene
title_sort transistor properties of 2,7-dialkyl-substituted phenanthro[2,1-b:7,8-b′]dithiophene
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5138603/
https://www.ncbi.nlm.nih.gov/pubmed/27922104
http://dx.doi.org/10.1038/srep38535
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