Nondestructive Method for Mapping Metal Contact Diffusion in In(2)O(3) Thin-Film Transistors

[Image: see text] The channel width-to-length ratio is an important transistor parameter for integrated circuit design. Contact diffusion into the channel during fabrication or operation alters the channel width and this important parameter. A novel methodology combining atomic force microscopy and...

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Detalles Bibliográficos
Autores principales: Kryvchenkova, Olga, Abdullah, Isam, Macdonald, John Emyr, Elliott, Martin, Anthopoulos, Thomas D., Lin, Yen-Hung, Igić, Petar, Kalna, Karol, Cobley, Richard J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2016
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5140079/
https://www.ncbi.nlm.nih.gov/pubmed/27581104
http://dx.doi.org/10.1021/acsami.6b10332

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5140079/
https://www.ncbi.nlm.nih.gov/pubmed/27581104
http://dx.doi.org/10.1021/acsami.6b10332

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