Cargando…
Depth resolved lattice-charge coupling in epitaxial BiFeO(3) thin film
For epitaxial films, a critical thickness (t(c)) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the t(c) in BiFeO(3) thin films acts as a boundary to determine the crystalline phase, ferroelectricity, an...
Autores principales: | Lee, Hyeon Jun, Lee, Sung Su, Kwak, Jeong Hun, Kim, Young-Min, Jeong, Hu Young, Borisevich, Albina Y., Lee, Su Yong, Noh, Do Young, Kwon, Owoong, Kim, Yunseok, Jo, Ji Young |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5144002/ https://www.ncbi.nlm.nih.gov/pubmed/27929103 http://dx.doi.org/10.1038/srep38724 |
Ejemplares similares
-
Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO(3) films
por: Shin, Y. J., et al.
Publicado: (2015) -
Revealing the flexoelectricity in the mixed-phase regions of epitaxial BiFeO(3) thin films
por: Cheng, Cheng-En, et al.
Publicado: (2015) -
Structural Instability of Epitaxial (001) BiFeO(3) Thin Films under Tensile Strain
por: Fan, Zhen, et al.
Publicado: (2014) -
Domain and Switching Control of the Bulk Photovoltaic Effect in Epitaxial BiFeO(3) Thin Films
por: Knoche, David S., et al.
Publicado: (2019) -
Tensile stress effect on epitaxial BiFeO(3) thin film grown on KTaO(3)
por: Bae, In-Tae, et al.
Publicado: (2018)