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A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase th...

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Detalles Bibliográficos
Autores principales: Liu, Wenjian, Zhang, Hongxia, Shi, Jin-an, Wang, Zhongchang, Song, Cheng, Wang, Xiangrong, Lu, Siyuan, Zhou, Xiangjun, Gu, Lin, Louzguine-Luzgin, Dmitri V., Chen, Mingwei, Yao, Kefu, Chen, Na
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5155142/
https://www.ncbi.nlm.nih.gov/pubmed/27929059
http://dx.doi.org/10.1038/ncomms13497
Descripción
Sumario:Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III–V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co(28.6)Fe(12.4)Ta(4.3)B(8.7)O(46) magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p–n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm(2) V(−1) s(−1). Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities.