Current crowding mediated large contact noise in graphene field-effect transistors

The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene–metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investi...

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Detalles Bibliográficos
Autores principales: Karnatak, Paritosh, Sai, T. Phanindra, Goswami, Srijit, Ghatak, Subhamoy, Kaushal, Sanjeev, Ghosh, Arindam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5155149/
https://www.ncbi.nlm.nih.gov/pubmed/27929087
http://dx.doi.org/10.1038/ncomms13703

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5155149/
https://www.ncbi.nlm.nih.gov/pubmed/27929087
http://dx.doi.org/10.1038/ncomms13703

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