Enhanced Conversion Efficiency of III–V Triple-junction Solar Cells with Graphene Quantum Dots

Graphene has been used to synthesize graphene quantum dots (GQDs) via pulsed laser ablation. By depositing the synthesized GQDs on the surface of InGaP/InGaAs/Ge triple-junction solar cells, the short-circuit current, fill factor, and conversion efficiency were enhanced remarkably. As the GQD concen...

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Detalles Bibliográficos
Autores principales: Lin, Tzu-Neng, Santiago, Svette Reina Merden S., Zheng, Jie-An, Chao, Yu-Chiang, Yuan, Chi-Tsu, Shen, Ji-Lin, Wu, Chih-Hung, Lin, Cheng- An J., Liu, Wei-Ren, Cheng, Ming-Chiang, Chou, Wu-Ching
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5159817/
https://www.ncbi.nlm.nih.gov/pubmed/27982073
http://dx.doi.org/10.1038/srep39163
Descripción
Sumario:Graphene has been used to synthesize graphene quantum dots (GQDs) via pulsed laser ablation. By depositing the synthesized GQDs on the surface of InGaP/InGaAs/Ge triple-junction solar cells, the short-circuit current, fill factor, and conversion efficiency were enhanced remarkably. As the GQD concentration is increased, the conversion efficiency in the solar cell increases accordingly. A conversion efficiency of 33.2% for InGaP/InGaAs/Ge triple-junction solar cells has been achieved at the GQD concentration of 1.2 mg/ml, corresponding to a 35% enhancement compared to the cell without GQDs. On the basis of time-resolved photoluminescence, external quantum efficiency, and work-function measurements, we suggest that the efficiency enhancement in the InGaP/InGaAs/Ge triple-junction solar cells is primarily caused by the carrier injection from GQDs to the InGaP top subcell.

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