Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals

Recently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923 K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we...

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Detalles Bibliográficos
Autores principales: Duong, Anh Tuan, Nguyen, Van Quang, Duvjir, Ganbat, Duong, Van Thiet, Kwon, Suyong, Song, Jae Yong, Lee, Jae Ki, Lee, Ji Eun, Park, SuDong, Min, Taewon, Lee, Jaekwang, Kim, Jungdae, Cho, Sunglae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5160008/
https://www.ncbi.nlm.nih.gov/pubmed/27941762
http://dx.doi.org/10.1038/ncomms13713
Descripción
Sumario:Recently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923 K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we report that n-type SnSe single crystals were successfully synthesized by substituting Bi at Sn sites. In addition, it was found that the carrier concentration increases with Bi content, which has a great influence on the thermoelectric properties of n-type SnSe single crystals. Indeed, we achieved the maximum ZT value of 2.2 along b axis at 733 K in the most highly doped n-type SnSe with a carrier density of −2.1 × 10(19) cm(−3) at 773 K.

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