Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals

Recently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923 K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we...

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Autores principales: Duong, Anh Tuan, Nguyen, Van Quang, Duvjir, Ganbat, Duong, Van Thiet, Kwon, Suyong, Song, Jae Yong, Lee, Jae Ki, Lee, Ji Eun, Park, SuDong, Min, Taewon, Lee, Jaekwang, Kim, Jungdae, Cho, Sunglae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5160008/
https://www.ncbi.nlm.nih.gov/pubmed/27941762
http://dx.doi.org/10.1038/ncomms13713
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author Duong, Anh Tuan
Nguyen, Van Quang
Duvjir, Ganbat
Duong, Van Thiet
Kwon, Suyong
Song, Jae Yong
Lee, Jae Ki
Lee, Ji Eun
Park, SuDong
Min, Taewon
Lee, Jaekwang
Kim, Jungdae
Cho, Sunglae
author_facet Duong, Anh Tuan
Nguyen, Van Quang
Duvjir, Ganbat
Duong, Van Thiet
Kwon, Suyong
Song, Jae Yong
Lee, Jae Ki
Lee, Ji Eun
Park, SuDong
Min, Taewon
Lee, Jaekwang
Kim, Jungdae
Cho, Sunglae
author_sort Duong, Anh Tuan
collection PubMed
description Recently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923 K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we report that n-type SnSe single crystals were successfully synthesized by substituting Bi at Sn sites. In addition, it was found that the carrier concentration increases with Bi content, which has a great influence on the thermoelectric properties of n-type SnSe single crystals. Indeed, we achieved the maximum ZT value of 2.2 along b axis at 733 K in the most highly doped n-type SnSe with a carrier density of −2.1 × 10(19) cm(−3) at 773 K.
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spelling pubmed-51600082016-12-20 Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals Duong, Anh Tuan Nguyen, Van Quang Duvjir, Ganbat Duong, Van Thiet Kwon, Suyong Song, Jae Yong Lee, Jae Ki Lee, Ji Eun Park, SuDong Min, Taewon Lee, Jaekwang Kim, Jungdae Cho, Sunglae Nat Commun Article Recently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923 K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we report that n-type SnSe single crystals were successfully synthesized by substituting Bi at Sn sites. In addition, it was found that the carrier concentration increases with Bi content, which has a great influence on the thermoelectric properties of n-type SnSe single crystals. Indeed, we achieved the maximum ZT value of 2.2 along b axis at 733 K in the most highly doped n-type SnSe with a carrier density of −2.1 × 10(19) cm(−3) at 773 K. Nature Publishing Group 2016-12-12 /pmc/articles/PMC5160008/ /pubmed/27941762 http://dx.doi.org/10.1038/ncomms13713 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Duong, Anh Tuan
Nguyen, Van Quang
Duvjir, Ganbat
Duong, Van Thiet
Kwon, Suyong
Song, Jae Yong
Lee, Jae Ki
Lee, Ji Eun
Park, SuDong
Min, Taewon
Lee, Jaekwang
Kim, Jungdae
Cho, Sunglae
Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals
title Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals
title_full Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals
title_fullStr Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals
title_full_unstemmed Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals
title_short Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals
title_sort achieving zt=2.2 with bi-doped n-type snse single crystals
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5160008/
https://www.ncbi.nlm.nih.gov/pubmed/27941762
http://dx.doi.org/10.1038/ncomms13713
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