Cargando…
Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching
Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM). In this article, we provide a new insight into the app...
| Autores principales: | , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Public Library of Science
2016
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5167399/ https://www.ncbi.nlm.nih.gov/pubmed/27992513 http://dx.doi.org/10.1371/journal.pone.0168515 |