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~3-nm ZnO Nanoislands Deposition and Application in Charge Trapping Memory Grown by Single ALD Step
Low-dimensional semiconductor nanostructures are of great interest in high performance electronic and photonic devices. ZnO is considered to be a multifunctional material due to its unique properties with potential in various applications. In this work, 3-nm ZnO nanoislands are deposited by Atomic L...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5171791/ https://www.ncbi.nlm.nih.gov/pubmed/27991492 http://dx.doi.org/10.1038/srep38712 |
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author | El-Atab, Nazek Chowdhury, Farsad Ulusoy, Turkan Gamze Ghobadi, Amir Nazirzadeh, Amin Okyay, Ali K. Nayfeh, Ammar |
author_facet | El-Atab, Nazek Chowdhury, Farsad Ulusoy, Turkan Gamze Ghobadi, Amir Nazirzadeh, Amin Okyay, Ali K. Nayfeh, Ammar |
author_sort | El-Atab, Nazek |
collection | PubMed |
description | Low-dimensional semiconductor nanostructures are of great interest in high performance electronic and photonic devices. ZnO is considered to be a multifunctional material due to its unique properties with potential in various applications. In this work, 3-nm ZnO nanoislands are deposited by Atomic Layer Deposition (ALD) and the electronic properties are characterized by UV-Vis-NIR Spectrophotometer and X-ray Photoelectron Spectroscopy. The results show that the nanostructures show quantum confinement effects in 1D. Moreover, Metal-Oxide-Semiconductor Capacitor (MOSCAP) charge trapping memory devices with ZnO nanoislands charge storage layer are fabricated by a single ALD step and their performances are analyzed. The devices showed a large memory window at low operating voltages with excellent retention and endurance characteristics due to the additional oxygen vacancies in the nanoislands and the deep barrier for the trapped holes due to the reduction in ZnO electron affinity. The results show that the ZnO nanoislands are promising in future low power memory applications. |
format | Online Article Text |
id | pubmed-5171791 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-51717912016-12-28 ~3-nm ZnO Nanoislands Deposition and Application in Charge Trapping Memory Grown by Single ALD Step El-Atab, Nazek Chowdhury, Farsad Ulusoy, Turkan Gamze Ghobadi, Amir Nazirzadeh, Amin Okyay, Ali K. Nayfeh, Ammar Sci Rep Article Low-dimensional semiconductor nanostructures are of great interest in high performance electronic and photonic devices. ZnO is considered to be a multifunctional material due to its unique properties with potential in various applications. In this work, 3-nm ZnO nanoislands are deposited by Atomic Layer Deposition (ALD) and the electronic properties are characterized by UV-Vis-NIR Spectrophotometer and X-ray Photoelectron Spectroscopy. The results show that the nanostructures show quantum confinement effects in 1D. Moreover, Metal-Oxide-Semiconductor Capacitor (MOSCAP) charge trapping memory devices with ZnO nanoislands charge storage layer are fabricated by a single ALD step and their performances are analyzed. The devices showed a large memory window at low operating voltages with excellent retention and endurance characteristics due to the additional oxygen vacancies in the nanoislands and the deep barrier for the trapped holes due to the reduction in ZnO electron affinity. The results show that the ZnO nanoislands are promising in future low power memory applications. Nature Publishing Group 2016-12-19 /pmc/articles/PMC5171791/ /pubmed/27991492 http://dx.doi.org/10.1038/srep38712 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article El-Atab, Nazek Chowdhury, Farsad Ulusoy, Turkan Gamze Ghobadi, Amir Nazirzadeh, Amin Okyay, Ali K. Nayfeh, Ammar ~3-nm ZnO Nanoislands Deposition and Application in Charge Trapping Memory Grown by Single ALD Step |
title | ~3-nm ZnO Nanoislands Deposition and Application in Charge Trapping Memory Grown by Single ALD Step |
title_full | ~3-nm ZnO Nanoislands Deposition and Application in Charge Trapping Memory Grown by Single ALD Step |
title_fullStr | ~3-nm ZnO Nanoislands Deposition and Application in Charge Trapping Memory Grown by Single ALD Step |
title_full_unstemmed | ~3-nm ZnO Nanoislands Deposition and Application in Charge Trapping Memory Grown by Single ALD Step |
title_short | ~3-nm ZnO Nanoislands Deposition and Application in Charge Trapping Memory Grown by Single ALD Step |
title_sort | ~3-nm zno nanoislands deposition and application in charge trapping memory grown by single ald step |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5171791/ https://www.ncbi.nlm.nih.gov/pubmed/27991492 http://dx.doi.org/10.1038/srep38712 |
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