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Directional interlayer spin-valley transfer in two-dimensional heterostructures

Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimens...

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Autores principales: Schaibley, John R., Rivera, Pasqual, Yu, Hongyi, Seyler, Kyle L., Yan, Jiaqiang, Mandrus, David G., Taniguchi, Takashi, Watanabe, Kenji, Yao, Wang, Xu, Xiaodong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5171822/
https://www.ncbi.nlm.nih.gov/pubmed/27966524
http://dx.doi.org/10.1038/ncomms13747
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author Schaibley, John R.
Rivera, Pasqual
Yu, Hongyi
Seyler, Kyle L.
Yan, Jiaqiang
Mandrus, David G.
Taniguchi, Takashi
Watanabe, Kenji
Yao, Wang
Xu, Xiaodong
author_facet Schaibley, John R.
Rivera, Pasqual
Yu, Hongyi
Seyler, Kyle L.
Yan, Jiaqiang
Mandrus, David G.
Taniguchi, Takashi
Watanabe, Kenji
Yao, Wang
Xu, Xiaodong
author_sort Schaibley, John R.
collection PubMed
description Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. Here, we report the direct observation that an optically generated spin-valley polarization in one monolayer can be transferred between layers of a two-dimensional MoSe(2)–WSe(2) heterostructure. Using non-degenerate optical circular dichroism spectroscopy, we show that charge transfer between two monolayers conserves spin-valley polarization and is only weakly dependent on the twist angle between layers. Our work points to a new spin-valley pumping scheme in nanoscale devices, provides a fundamental understanding of spin-valley transfer across the two-dimensional interface, and shows the potential use of two-dimensional semiconductors as a spin-valley generator in two-dimensional spin/valleytronic devices for storing and processing information.
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spelling pubmed-51718222016-12-23 Directional interlayer spin-valley transfer in two-dimensional heterostructures Schaibley, John R. Rivera, Pasqual Yu, Hongyi Seyler, Kyle L. Yan, Jiaqiang Mandrus, David G. Taniguchi, Takashi Watanabe, Kenji Yao, Wang Xu, Xiaodong Nat Commun Article Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. Here, we report the direct observation that an optically generated spin-valley polarization in one monolayer can be transferred between layers of a two-dimensional MoSe(2)–WSe(2) heterostructure. Using non-degenerate optical circular dichroism spectroscopy, we show that charge transfer between two monolayers conserves spin-valley polarization and is only weakly dependent on the twist angle between layers. Our work points to a new spin-valley pumping scheme in nanoscale devices, provides a fundamental understanding of spin-valley transfer across the two-dimensional interface, and shows the potential use of two-dimensional semiconductors as a spin-valley generator in two-dimensional spin/valleytronic devices for storing and processing information. Nature Publishing Group 2016-12-14 /pmc/articles/PMC5171822/ /pubmed/27966524 http://dx.doi.org/10.1038/ncomms13747 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Schaibley, John R.
Rivera, Pasqual
Yu, Hongyi
Seyler, Kyle L.
Yan, Jiaqiang
Mandrus, David G.
Taniguchi, Takashi
Watanabe, Kenji
Yao, Wang
Xu, Xiaodong
Directional interlayer spin-valley transfer in two-dimensional heterostructures
title Directional interlayer spin-valley transfer in two-dimensional heterostructures
title_full Directional interlayer spin-valley transfer in two-dimensional heterostructures
title_fullStr Directional interlayer spin-valley transfer in two-dimensional heterostructures
title_full_unstemmed Directional interlayer spin-valley transfer in two-dimensional heterostructures
title_short Directional interlayer spin-valley transfer in two-dimensional heterostructures
title_sort directional interlayer spin-valley transfer in two-dimensional heterostructures
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5171822/
https://www.ncbi.nlm.nih.gov/pubmed/27966524
http://dx.doi.org/10.1038/ncomms13747
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