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High performing solution-coated electrolyte-gated organic field-effect transistors for aqueous media operation
Since the first demonstration, the electrolyte-gated organic field-effect transistors (EGOFETs) have immediately gained much attention for the development of cutting-edge technology and they are expected to have a strong impact in the field of (bio-)sensors. However EGOFETs directly expose their act...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5177926/ https://www.ncbi.nlm.nih.gov/pubmed/28004824 http://dx.doi.org/10.1038/srep39623 |
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author | Zhang, Qiaoming Leonardi, Francesca Casalini, Stefano Temiño, Inés Mas-Torrent, Marta |
author_facet | Zhang, Qiaoming Leonardi, Francesca Casalini, Stefano Temiño, Inés Mas-Torrent, Marta |
author_sort | Zhang, Qiaoming |
collection | PubMed |
description | Since the first demonstration, the electrolyte-gated organic field-effect transistors (EGOFETs) have immediately gained much attention for the development of cutting-edge technology and they are expected to have a strong impact in the field of (bio-)sensors. However EGOFETs directly expose their active material towards the aqueous media, hence a limited library of organic semiconductors is actually suitable. By using two mostly unexplored strategies in EGOFETs such as blended materials together with a printing technique, we have successfully widened this library. Our benchmarks were 6,13-bis(triisopropylsilylethynyl)pentacene and 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT), which have been firstly blended with polystyrene and secondly deposited by means of the bar-assisted meniscus shearing (BAMS) technique. Our approach yielded thin films (i.e. no thicker than 30 nm) suitable for organic electronics and stable in liquid environment. Up to date, these EGOFETs show unprecedented performances. Furthermore, an extremely harsh environment, like NaCl 1M, has been used in order to test the limit of operability of these electronic devices. Albeit an electrical worsening is observed, our devices can operate under different electrical stresses within the time frame of hours up to a week. In conclusion, our approach turns out to be a powerful tool for the EGOFET manufacturing. |
format | Online Article Text |
id | pubmed-5177926 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-51779262016-12-29 High performing solution-coated electrolyte-gated organic field-effect transistors for aqueous media operation Zhang, Qiaoming Leonardi, Francesca Casalini, Stefano Temiño, Inés Mas-Torrent, Marta Sci Rep Article Since the first demonstration, the electrolyte-gated organic field-effect transistors (EGOFETs) have immediately gained much attention for the development of cutting-edge technology and they are expected to have a strong impact in the field of (bio-)sensors. However EGOFETs directly expose their active material towards the aqueous media, hence a limited library of organic semiconductors is actually suitable. By using two mostly unexplored strategies in EGOFETs such as blended materials together with a printing technique, we have successfully widened this library. Our benchmarks were 6,13-bis(triisopropylsilylethynyl)pentacene and 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT), which have been firstly blended with polystyrene and secondly deposited by means of the bar-assisted meniscus shearing (BAMS) technique. Our approach yielded thin films (i.e. no thicker than 30 nm) suitable for organic electronics and stable in liquid environment. Up to date, these EGOFETs show unprecedented performances. Furthermore, an extremely harsh environment, like NaCl 1M, has been used in order to test the limit of operability of these electronic devices. Albeit an electrical worsening is observed, our devices can operate under different electrical stresses within the time frame of hours up to a week. In conclusion, our approach turns out to be a powerful tool for the EGOFET manufacturing. Nature Publishing Group 2016-12-22 /pmc/articles/PMC5177926/ /pubmed/28004824 http://dx.doi.org/10.1038/srep39623 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Zhang, Qiaoming Leonardi, Francesca Casalini, Stefano Temiño, Inés Mas-Torrent, Marta High performing solution-coated electrolyte-gated organic field-effect transistors for aqueous media operation |
title | High performing solution-coated electrolyte-gated organic field-effect transistors for aqueous media operation |
title_full | High performing solution-coated electrolyte-gated organic field-effect transistors for aqueous media operation |
title_fullStr | High performing solution-coated electrolyte-gated organic field-effect transistors for aqueous media operation |
title_full_unstemmed | High performing solution-coated electrolyte-gated organic field-effect transistors for aqueous media operation |
title_short | High performing solution-coated electrolyte-gated organic field-effect transistors for aqueous media operation |
title_sort | high performing solution-coated electrolyte-gated organic field-effect transistors for aqueous media operation |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5177926/ https://www.ncbi.nlm.nih.gov/pubmed/28004824 http://dx.doi.org/10.1038/srep39623 |
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