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The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals
The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on the composition, thickness and stacking of the component layers. Here we use density functional theory and high field magneto-optics to investigate the metal chalcogenide InSe, a recent addition to th...
Autores principales: | , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5180233/ https://www.ncbi.nlm.nih.gov/pubmed/28008964 http://dx.doi.org/10.1038/srep39619 |
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author | Mudd, G. W. Molas, M. R. Chen, X. Zólyomi, V. Nogajewski, K. Kudrynskyi, Z. R. Kovalyuk, Z. D. Yusa, G. Makarovsky, O. Eaves, L. Potemski, M. Fal’ko, V. I. Patanè, A. |
author_facet | Mudd, G. W. Molas, M. R. Chen, X. Zólyomi, V. Nogajewski, K. Kudrynskyi, Z. R. Kovalyuk, Z. D. Yusa, G. Makarovsky, O. Eaves, L. Potemski, M. Fal’ko, V. I. Patanè, A. |
author_sort | Mudd, G. W. |
collection | PubMed |
description | The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on the composition, thickness and stacking of the component layers. Here we use density functional theory and high field magneto-optics to investigate the metal chalcogenide InSe, a recent addition to the family of vdW layered crystals, which transforms from a direct to an indirect band gap semiconductor as the number of layers is reduced. We investigate this direct-to-indirect bandgap crossover, demonstrate a highly tuneable optical response from the near infrared to the visible spectrum with decreasing layer thickness down to 2 layers, and report quantum dot-like optical emissions distributed over a wide range of energy. Our analysis also indicates that electron and exciton effective masses are weakly dependent on the layer thickness and are significantly smaller than in other vdW crystals. These properties are unprecedented within the large family of vdW crystals and demonstrate the potential of InSe for electronic and photonic technologies. |
format | Online Article Text |
id | pubmed-5180233 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-51802332016-12-29 The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals Mudd, G. W. Molas, M. R. Chen, X. Zólyomi, V. Nogajewski, K. Kudrynskyi, Z. R. Kovalyuk, Z. D. Yusa, G. Makarovsky, O. Eaves, L. Potemski, M. Fal’ko, V. I. Patanè, A. Sci Rep Article The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on the composition, thickness and stacking of the component layers. Here we use density functional theory and high field magneto-optics to investigate the metal chalcogenide InSe, a recent addition to the family of vdW layered crystals, which transforms from a direct to an indirect band gap semiconductor as the number of layers is reduced. We investigate this direct-to-indirect bandgap crossover, demonstrate a highly tuneable optical response from the near infrared to the visible spectrum with decreasing layer thickness down to 2 layers, and report quantum dot-like optical emissions distributed over a wide range of energy. Our analysis also indicates that electron and exciton effective masses are weakly dependent on the layer thickness and are significantly smaller than in other vdW crystals. These properties are unprecedented within the large family of vdW crystals and demonstrate the potential of InSe for electronic and photonic technologies. Nature Publishing Group 2016-12-23 /pmc/articles/PMC5180233/ /pubmed/28008964 http://dx.doi.org/10.1038/srep39619 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Mudd, G. W. Molas, M. R. Chen, X. Zólyomi, V. Nogajewski, K. Kudrynskyi, Z. R. Kovalyuk, Z. D. Yusa, G. Makarovsky, O. Eaves, L. Potemski, M. Fal’ko, V. I. Patanè, A. The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals |
title | The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals |
title_full | The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals |
title_fullStr | The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals |
title_full_unstemmed | The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals |
title_short | The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals |
title_sort | direct-to-indirect band gap crossover in two-dimensional van der waals indium selenide crystals |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5180233/ https://www.ncbi.nlm.nih.gov/pubmed/28008964 http://dx.doi.org/10.1038/srep39619 |
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