Cargando…
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells
Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the desirable but contrasting requirements of spin robustness against relaxation mechanisms and sizeable coupling between spin and orbital motion of the...
Autores principales: | , , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5187588/ https://www.ncbi.nlm.nih.gov/pubmed/28000670 http://dx.doi.org/10.1038/ncomms13886 |
_version_ | 1782486873290047488 |
---|---|
author | Giorgioni, Anna Paleari, Stefano Cecchi, Stefano Vitiello, Elisa Grilli, Emanuele Isella, Giovanni Jantsch, Wolfgang Fanciulli, Marco Pezzoli, Fabio |
author_facet | Giorgioni, Anna Paleari, Stefano Cecchi, Stefano Vitiello, Elisa Grilli, Emanuele Isella, Giovanni Jantsch, Wolfgang Fanciulli, Marco Pezzoli, Fabio |
author_sort | Giorgioni, Anna |
collection | PubMed |
description | Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the desirable but contrasting requirements of spin robustness against relaxation mechanisms and sizeable coupling between spin and orbital motion of the carriers. Here, we focus on Ge, which is a prominent candidate for shuttling spin quantum bits into the mainstream Si electronics. So far, however, the intrinsic spin-dependent phenomena of free electrons in conventional Ge/Si heterojunctions have proved to be elusive because of epitaxy constraints and an unfavourable band alignment. We overcome these fundamental limitations by investigating a two-dimensional electron gas in quantum wells of pure Ge grown on Si. These epitaxial systems demonstrate exceptionally long spin lifetimes. In particular, by fine-tuning quantum confinement we demonstrate that the electron Landé g factor can be engineered in our CMOS-compatible architecture over a range previously inaccessible for Si spintronics. |
format | Online Article Text |
id | pubmed-5187588 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-51875882017-01-03 Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells Giorgioni, Anna Paleari, Stefano Cecchi, Stefano Vitiello, Elisa Grilli, Emanuele Isella, Giovanni Jantsch, Wolfgang Fanciulli, Marco Pezzoli, Fabio Nat Commun Article Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the desirable but contrasting requirements of spin robustness against relaxation mechanisms and sizeable coupling between spin and orbital motion of the carriers. Here, we focus on Ge, which is a prominent candidate for shuttling spin quantum bits into the mainstream Si electronics. So far, however, the intrinsic spin-dependent phenomena of free electrons in conventional Ge/Si heterojunctions have proved to be elusive because of epitaxy constraints and an unfavourable band alignment. We overcome these fundamental limitations by investigating a two-dimensional electron gas in quantum wells of pure Ge grown on Si. These epitaxial systems demonstrate exceptionally long spin lifetimes. In particular, by fine-tuning quantum confinement we demonstrate that the electron Landé g factor can be engineered in our CMOS-compatible architecture over a range previously inaccessible for Si spintronics. Nature Publishing Group 2016-12-21 /pmc/articles/PMC5187588/ /pubmed/28000670 http://dx.doi.org/10.1038/ncomms13886 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Giorgioni, Anna Paleari, Stefano Cecchi, Stefano Vitiello, Elisa Grilli, Emanuele Isella, Giovanni Jantsch, Wolfgang Fanciulli, Marco Pezzoli, Fabio Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells |
title | Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells |
title_full | Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells |
title_fullStr | Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells |
title_full_unstemmed | Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells |
title_short | Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells |
title_sort | strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in ge quantum wells |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5187588/ https://www.ncbi.nlm.nih.gov/pubmed/28000670 http://dx.doi.org/10.1038/ncomms13886 |
work_keys_str_mv | AT giorgionianna strongconfinementinducedengineeringofthegfactorandlifetimeofconductionelectronspinsingequantumwells AT palearistefano strongconfinementinducedengineeringofthegfactorandlifetimeofconductionelectronspinsingequantumwells AT cecchistefano strongconfinementinducedengineeringofthegfactorandlifetimeofconductionelectronspinsingequantumwells AT vitielloelisa strongconfinementinducedengineeringofthegfactorandlifetimeofconductionelectronspinsingequantumwells AT grilliemanuele strongconfinementinducedengineeringofthegfactorandlifetimeofconductionelectronspinsingequantumwells AT isellagiovanni strongconfinementinducedengineeringofthegfactorandlifetimeofconductionelectronspinsingequantumwells AT jantschwolfgang strongconfinementinducedengineeringofthegfactorandlifetimeofconductionelectronspinsingequantumwells AT fanciullimarco strongconfinementinducedengineeringofthegfactorandlifetimeofconductionelectronspinsingequantumwells AT pezzolifabio strongconfinementinducedengineeringofthegfactorandlifetimeofconductionelectronspinsingequantumwells |