Cargando…
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells
Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the desirable but contrasting requirements of spin robustness against relaxation mechanisms and sizeable coupling between spin and orbital motion of the...
Autores principales: | Giorgioni, Anna, Paleari, Stefano, Cecchi, Stefano, Vitiello, Elisa, Grilli, Emanuele, Isella, Giovanni, Jantsch, Wolfgang, Fanciulli, Marco, Pezzoli, Fabio |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5187588/ https://www.ncbi.nlm.nih.gov/pubmed/28000670 http://dx.doi.org/10.1038/ncomms13886 |
Ejemplares similares
-
Structural investigations of the α(12) Si–Ge superstructure
por: Etzelstorfer, Tanja, et al.
Publicado: (2015) -
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy
por: Picco, Andrea, et al.
Publicado: (2012) -
Optically reconfigurable polarized emission in Germanium
por: De Cesari, Sebastiano, et al.
Publicado: (2018) -
Variation of the giant intrinsic spin Hall conductivity of Pt with carrier lifetime
por: Zhu, Lijun, et al.
Publicado: (2019) -
Ferroelectric Control of the Spin Texture in GeTe
por: Rinaldi, Christian, et al.
Publicado: (2018)