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A Multipurpose CMOS Platform for Nanosensing

This paper presents a customizable sensing system based on functionalized nanowires (NWs) assembled onto complementary metal oxide semiconductor (CMOS) technology. The Micro-for-Nano (M4N) chip integrates on top of the electronics an array of aluminum microelectrodes covered with gold by means of a...

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Autores principales: Bonanno, Alberto, Sanginario, Alessandro, Marasso, Simone L., Miccoli, Beatrice, Bejtka, Katarzyna, Benetto, Simone, Demarchi, Danilo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5191015/
https://www.ncbi.nlm.nih.gov/pubmed/27916911
http://dx.doi.org/10.3390/s16122034
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author Bonanno, Alberto
Sanginario, Alessandro
Marasso, Simone L.
Miccoli, Beatrice
Bejtka, Katarzyna
Benetto, Simone
Demarchi, Danilo
author_facet Bonanno, Alberto
Sanginario, Alessandro
Marasso, Simone L.
Miccoli, Beatrice
Bejtka, Katarzyna
Benetto, Simone
Demarchi, Danilo
author_sort Bonanno, Alberto
collection PubMed
description This paper presents a customizable sensing system based on functionalized nanowires (NWs) assembled onto complementary metal oxide semiconductor (CMOS) technology. The Micro-for-Nano (M4N) chip integrates on top of the electronics an array of aluminum microelectrodes covered with gold by means of a customized electroless plating process. The NW assembly process is driven by an array of on-chip dielectrophoresis (DEP) generators, enabling a custom layout of different nanosensors on the same microelectrode array. The electrical properties of each assembled NW are singularly sensed through an in situ CMOS read-out circuit (ROC) that guarantees a low noise and reliable measurement. The M4N chip is directly connected to an external microcontroller for configuration and data processing. The processed data are then redirected to a workstation for real-time data visualization and storage during sensing experiments. As proof of concept, ZnO nanowires have been integrated onto the M4N chip to validate the approach that enables different kind of sensing experiments. The device has been then irradiated by an external UV source with adjustable power to measure the ZnO sensitivity to UV-light exposure. A maximum variation of about 80% of the ZnO-NW resistance has been detected by the M4N system when the assembled 5 [Formula: see text] m × 500 nm single ZnO-NW is exposed to an estimated incident radiant UV-light flux in the range of 1 nW–229 nW. The performed experiments prove the efficiency of the platform conceived for exploiting any kind of material that can change its capacitance and/or resistance due to an external stimulus.
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spelling pubmed-51910152017-01-03 A Multipurpose CMOS Platform for Nanosensing Bonanno, Alberto Sanginario, Alessandro Marasso, Simone L. Miccoli, Beatrice Bejtka, Katarzyna Benetto, Simone Demarchi, Danilo Sensors (Basel) Article This paper presents a customizable sensing system based on functionalized nanowires (NWs) assembled onto complementary metal oxide semiconductor (CMOS) technology. The Micro-for-Nano (M4N) chip integrates on top of the electronics an array of aluminum microelectrodes covered with gold by means of a customized electroless plating process. The NW assembly process is driven by an array of on-chip dielectrophoresis (DEP) generators, enabling a custom layout of different nanosensors on the same microelectrode array. The electrical properties of each assembled NW are singularly sensed through an in situ CMOS read-out circuit (ROC) that guarantees a low noise and reliable measurement. The M4N chip is directly connected to an external microcontroller for configuration and data processing. The processed data are then redirected to a workstation for real-time data visualization and storage during sensing experiments. As proof of concept, ZnO nanowires have been integrated onto the M4N chip to validate the approach that enables different kind of sensing experiments. The device has been then irradiated by an external UV source with adjustable power to measure the ZnO sensitivity to UV-light exposure. A maximum variation of about 80% of the ZnO-NW resistance has been detected by the M4N system when the assembled 5 [Formula: see text] m × 500 nm single ZnO-NW is exposed to an estimated incident radiant UV-light flux in the range of 1 nW–229 nW. The performed experiments prove the efficiency of the platform conceived for exploiting any kind of material that can change its capacitance and/or resistance due to an external stimulus. MDPI 2016-11-30 /pmc/articles/PMC5191015/ /pubmed/27916911 http://dx.doi.org/10.3390/s16122034 Text en © 2016 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC-BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Bonanno, Alberto
Sanginario, Alessandro
Marasso, Simone L.
Miccoli, Beatrice
Bejtka, Katarzyna
Benetto, Simone
Demarchi, Danilo
A Multipurpose CMOS Platform for Nanosensing
title A Multipurpose CMOS Platform for Nanosensing
title_full A Multipurpose CMOS Platform for Nanosensing
title_fullStr A Multipurpose CMOS Platform for Nanosensing
title_full_unstemmed A Multipurpose CMOS Platform for Nanosensing
title_short A Multipurpose CMOS Platform for Nanosensing
title_sort multipurpose cmos platform for nanosensing
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5191015/
https://www.ncbi.nlm.nih.gov/pubmed/27916911
http://dx.doi.org/10.3390/s16122034
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