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An Improved Zero Potential Circuit for Readout of a Two-Dimensional Resistive Sensor Array

With one operational amplifier (op-amp) in negative feedback, the traditional zero potential circuit could access one element in the two-dimensional (2-D) resistive sensor array with the shared row-column fashion but it suffered from the crosstalk problem for the non-scanned elements’ bypass current...

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Detalles Bibliográficos
Autores principales: Wu, Jian-Feng, Wang, Feng, Wang, Qi, Li, Jian-Qing, Song, Ai-Guo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5191051/
https://www.ncbi.nlm.nih.gov/pubmed/27929410
http://dx.doi.org/10.3390/s16122070
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author Wu, Jian-Feng
Wang, Feng
Wang, Qi
Li, Jian-Qing
Song, Ai-Guo
author_facet Wu, Jian-Feng
Wang, Feng
Wang, Qi
Li, Jian-Qing
Song, Ai-Guo
author_sort Wu, Jian-Feng
collection PubMed
description With one operational amplifier (op-amp) in negative feedback, the traditional zero potential circuit could access one element in the two-dimensional (2-D) resistive sensor array with the shared row-column fashion but it suffered from the crosstalk problem for the non-scanned elements’ bypass currents, which were injected into array’s non-scanned electrodes from zero potential. Firstly, for suppressing the crosstalk problem, we designed a novel improved zero potential circuit with one more op-amp in negative feedback to sample the total bypass current and calculate the precision resistance of the element being tested (EBT) with it. The improved setting non-scanned-electrode zero potential circuit (S-NSE-ZPC) was given as an example for analyzing and verifying the performance of the improved zero potential circuit. Secondly, in the S-NSE-ZPC and the improved S-NSE-ZPC, the effects of different parameters of the resistive sensor arrays and their readout circuits on the EBT’s measurement accuracy were simulated with the NI Multisim 12. Thirdly, part features of the improved circuit were verified with the experiments of a prototype circuit. Followed, the results were discussed and the conclusions were given. The experiment results show that the improved circuit, though it requires one more op-amp, one more resistor and one more sampling channel, can access the EBT in the 2-D resistive sensor array more accurately.
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spelling pubmed-51910512017-01-03 An Improved Zero Potential Circuit for Readout of a Two-Dimensional Resistive Sensor Array Wu, Jian-Feng Wang, Feng Wang, Qi Li, Jian-Qing Song, Ai-Guo Sensors (Basel) Article With one operational amplifier (op-amp) in negative feedback, the traditional zero potential circuit could access one element in the two-dimensional (2-D) resistive sensor array with the shared row-column fashion but it suffered from the crosstalk problem for the non-scanned elements’ bypass currents, which were injected into array’s non-scanned electrodes from zero potential. Firstly, for suppressing the crosstalk problem, we designed a novel improved zero potential circuit with one more op-amp in negative feedback to sample the total bypass current and calculate the precision resistance of the element being tested (EBT) with it. The improved setting non-scanned-electrode zero potential circuit (S-NSE-ZPC) was given as an example for analyzing and verifying the performance of the improved zero potential circuit. Secondly, in the S-NSE-ZPC and the improved S-NSE-ZPC, the effects of different parameters of the resistive sensor arrays and their readout circuits on the EBT’s measurement accuracy were simulated with the NI Multisim 12. Thirdly, part features of the improved circuit were verified with the experiments of a prototype circuit. Followed, the results were discussed and the conclusions were given. The experiment results show that the improved circuit, though it requires one more op-amp, one more resistor and one more sampling channel, can access the EBT in the 2-D resistive sensor array more accurately. MDPI 2016-12-06 /pmc/articles/PMC5191051/ /pubmed/27929410 http://dx.doi.org/10.3390/s16122070 Text en © 2016 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC-BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wu, Jian-Feng
Wang, Feng
Wang, Qi
Li, Jian-Qing
Song, Ai-Guo
An Improved Zero Potential Circuit for Readout of a Two-Dimensional Resistive Sensor Array
title An Improved Zero Potential Circuit for Readout of a Two-Dimensional Resistive Sensor Array
title_full An Improved Zero Potential Circuit for Readout of a Two-Dimensional Resistive Sensor Array
title_fullStr An Improved Zero Potential Circuit for Readout of a Two-Dimensional Resistive Sensor Array
title_full_unstemmed An Improved Zero Potential Circuit for Readout of a Two-Dimensional Resistive Sensor Array
title_short An Improved Zero Potential Circuit for Readout of a Two-Dimensional Resistive Sensor Array
title_sort improved zero potential circuit for readout of a two-dimensional resistive sensor array
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5191051/
https://www.ncbi.nlm.nih.gov/pubmed/27929410
http://dx.doi.org/10.3390/s16122070
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