Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the...

Descripción completa

Detalles Bibliográficos
Autores principales: Shih, Huan-Yu, Lee, Wei-Hao, Kao, Wei-Chung, Chuang, Yung-Chuan, Lin, Ray-Ming, Lin, Hsin-Chih, Shiojiri, Makoto, Chen, Miin-Jang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5206640/
https://www.ncbi.nlm.nih.gov/pubmed/28045075
http://dx.doi.org/10.1038/srep39717

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5206640/
https://www.ncbi.nlm.nih.gov/pubmed/28045075
http://dx.doi.org/10.1038/srep39717

Ejemplares similares