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Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the...

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Detalles Bibliográficos
Autores principales:	Shih, Huan-Yu, Lee, Wei-Hao, Kao, Wei-Chung, Chuang, Yung-Chuan, Lin, Ray-Ming, Lin, Hsin-Chih, Shiojiri, Makoto, Chen, Miin-Jang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5206640/ https://www.ncbi.nlm.nih.gov/pubmed/28045075 http://dx.doi.org/10.1038/srep39717

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