Pushing the limits of CMOS optical parametric amplifiers with USRN:Si(7)N(3) above the two-photon absorption edge

CMOS platforms operating at the telecommunications wavelength either reside within the highly dissipative two-photon regime in silicon-based optical devices, or possess small nonlinearities. Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techniques has l...

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Detalles Bibliográficos
Autores principales: Ooi, K. J. A., Ng, D. K. T., Wang, T., Chee, A. K. L., Ng, S. K., Wang, Q., Ang, L. K., Agarwal, A. M., Kimerling, L. C., Tan, D. T. H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5216112/
https://www.ncbi.nlm.nih.gov/pubmed/28051064
http://dx.doi.org/10.1038/ncomms13878

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5216112/
https://www.ncbi.nlm.nih.gov/pubmed/28051064
http://dx.doi.org/10.1038/ncomms13878

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