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Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics
To minimize the lattice thermal conductivity in thermoelectrics, strategies typically focus on the scattering of low-frequency phonons by interfaces and high-frequency phonons by point defects. In addition, scattering of mid-frequency phonons by dense dislocations, localized at the grain boundaries,...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5216132/ https://www.ncbi.nlm.nih.gov/pubmed/28051063 http://dx.doi.org/10.1038/ncomms13828 |
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author | Chen, Zhiwei Ge, Binghui Li, Wen Lin, Siqi Shen, Jiawen Chang, Yunjie Hanus, Riley Snyder, G. Jeffrey Pei, Yanzhong |
author_facet | Chen, Zhiwei Ge, Binghui Li, Wen Lin, Siqi Shen, Jiawen Chang, Yunjie Hanus, Riley Snyder, G. Jeffrey Pei, Yanzhong |
author_sort | Chen, Zhiwei |
collection | PubMed |
description | To minimize the lattice thermal conductivity in thermoelectrics, strategies typically focus on the scattering of low-frequency phonons by interfaces and high-frequency phonons by point defects. In addition, scattering of mid-frequency phonons by dense dislocations, localized at the grain boundaries, has been shown to reduce the lattice thermal conductivity and improve the thermoelectric performance. Here we propose a vacancy engineering strategy to create dense dislocations in the grains. In Pb(1−x)Sb(2x/3)Se solid solutions, cation vacancies are intentionally introduced, where after thermal annealing the vacancies can annihilate through a number of mechanisms creating the desired dislocations homogeneously distributed within the grains. This leads to a lattice thermal conductivity as low as 0.4 Wm(−1) K(−1) and a high thermoelectric figure of merit, which can be explained by a dislocation scattering model. The vacancy engineering strategy used here should be equally applicable for solid solution thermoelectrics and provides a strategy for improving zT. |
format | Online Article Text |
id | pubmed-5216132 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-52161322017-01-06 Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics Chen, Zhiwei Ge, Binghui Li, Wen Lin, Siqi Shen, Jiawen Chang, Yunjie Hanus, Riley Snyder, G. Jeffrey Pei, Yanzhong Nat Commun Article To minimize the lattice thermal conductivity in thermoelectrics, strategies typically focus on the scattering of low-frequency phonons by interfaces and high-frequency phonons by point defects. In addition, scattering of mid-frequency phonons by dense dislocations, localized at the grain boundaries, has been shown to reduce the lattice thermal conductivity and improve the thermoelectric performance. Here we propose a vacancy engineering strategy to create dense dislocations in the grains. In Pb(1−x)Sb(2x/3)Se solid solutions, cation vacancies are intentionally introduced, where after thermal annealing the vacancies can annihilate through a number of mechanisms creating the desired dislocations homogeneously distributed within the grains. This leads to a lattice thermal conductivity as low as 0.4 Wm(−1) K(−1) and a high thermoelectric figure of merit, which can be explained by a dislocation scattering model. The vacancy engineering strategy used here should be equally applicable for solid solution thermoelectrics and provides a strategy for improving zT. Nature Publishing Group 2017-01-04 /pmc/articles/PMC5216132/ /pubmed/28051063 http://dx.doi.org/10.1038/ncomms13828 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Chen, Zhiwei Ge, Binghui Li, Wen Lin, Siqi Shen, Jiawen Chang, Yunjie Hanus, Riley Snyder, G. Jeffrey Pei, Yanzhong Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics |
title | Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics |
title_full | Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics |
title_fullStr | Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics |
title_full_unstemmed | Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics |
title_short | Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics |
title_sort | vacancy-induced dislocations within grains for high-performance pbse thermoelectrics |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5216132/ https://www.ncbi.nlm.nih.gov/pubmed/28051063 http://dx.doi.org/10.1038/ncomms13828 |
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