Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS(2)

Recent progress in the synthesis of monolayer MoS(2), a two-dimensional direct band-gap semiconductor, is paving new pathways toward atomically thin electronics. Despite the large amount of literature, fundamental gaps remain in understanding electronic properties at the nanoscale. Here, we report a...

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Detalles Bibliográficos
Autores principales: Trainer, Daniel J., Putilov, Aleksei V., Di Giorgio, Cinzia, Saari, Timo, Wang, Baokai, Wolak, Mattheus, Chandrasena, Ravini U., Lane, Christopher, Chang, Tay-Rong, Jeng, Horng-Tay, Lin, Hsin, Kronast, Florian, Gray, Alexander X., Xi, Xiaoxing X., Nieminen, Jouko, Bansil, Arun, Iavarone, Maria
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5233980/
https://www.ncbi.nlm.nih.gov/pubmed/28084465
http://dx.doi.org/10.1038/srep40559

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5233980/
https://www.ncbi.nlm.nih.gov/pubmed/28084465
http://dx.doi.org/10.1038/srep40559

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