Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching

This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire subs...

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Detalles Bibliográficos
Autores principales: Chen, Lung-Chien, Lin, Wun-Wei, Liu, Te-Yu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5236048/
https://www.ncbi.nlm.nih.gov/pubmed/28091950
http://dx.doi.org/10.1186/s11671-016-1817-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5236048/
https://www.ncbi.nlm.nih.gov/pubmed/28091950
http://dx.doi.org/10.1186/s11671-016-1817-7

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