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Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching
This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire subs...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2017
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5236048/ https://www.ncbi.nlm.nih.gov/pubmed/28091950 http://dx.doi.org/10.1186/s11671-016-1817-7 |