Optimization of InGaAs/InAlAs Avalanche Photodiodes

In this paper, we report a two-dimensional (2D) simulation for InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and study the effect of the charge layer and multiplication layer on the operating voltage ranges of APD. We find that with the inc...

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Detalles Bibliográficos
Autores principales: Chen, Jun, Zhang, Zhengyu, Zhu, Min, Xu, Jintong, Li, Xiangyang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5236056/
https://www.ncbi.nlm.nih.gov/pubmed/28091945
http://dx.doi.org/10.1186/s11671-016-1815-9
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author Chen, Jun
Zhang, Zhengyu
Zhu, Min
Xu, Jintong
Li, Xiangyang
author_facet Chen, Jun
Zhang, Zhengyu
Zhu, Min
Xu, Jintong
Li, Xiangyang
author_sort Chen, Jun
collection PubMed
description In this paper, we report a two-dimensional (2D) simulation for InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and study the effect of the charge layer and multiplication layer on the operating voltage ranges of APD. We find that with the increase of the thicknesses as well as the doping concentrations of the charge layer and the multiplication layer, the punchthrough voltage increases; with the increase of the doping concentrations of two layers and the thickness of the charge layer, the breakdown voltage decreases; with the increase of the thickness of the multiplication layer, the breakdown voltage first rapidly declines and then slightly rises.
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spelling pubmed-52360562017-01-27 Optimization of InGaAs/InAlAs Avalanche Photodiodes Chen, Jun Zhang, Zhengyu Zhu, Min Xu, Jintong Li, Xiangyang Nanoscale Res Lett Nano Express In this paper, we report a two-dimensional (2D) simulation for InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and study the effect of the charge layer and multiplication layer on the operating voltage ranges of APD. We find that with the increase of the thicknesses as well as the doping concentrations of the charge layer and the multiplication layer, the punchthrough voltage increases; with the increase of the doping concentrations of two layers and the thickness of the charge layer, the breakdown voltage decreases; with the increase of the thickness of the multiplication layer, the breakdown voltage first rapidly declines and then slightly rises. Springer US 2017-01-13 /pmc/articles/PMC5236056/ /pubmed/28091945 http://dx.doi.org/10.1186/s11671-016-1815-9 Text en © The Author(s). 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Chen, Jun
Zhang, Zhengyu
Zhu, Min
Xu, Jintong
Li, Xiangyang
Optimization of InGaAs/InAlAs Avalanche Photodiodes
title Optimization of InGaAs/InAlAs Avalanche Photodiodes
title_full Optimization of InGaAs/InAlAs Avalanche Photodiodes
title_fullStr Optimization of InGaAs/InAlAs Avalanche Photodiodes
title_full_unstemmed Optimization of InGaAs/InAlAs Avalanche Photodiodes
title_short Optimization of InGaAs/InAlAs Avalanche Photodiodes
title_sort optimization of ingaas/inalas avalanche photodiodes
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5236056/
https://www.ncbi.nlm.nih.gov/pubmed/28091945
http://dx.doi.org/10.1186/s11671-016-1815-9
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