Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emiss...

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Detalles Bibliográficos
Autores principales: Shtepliuk, Ivan, Eriksson, Jens, Khranovskyy, Volodymyr, Iakimov, Tihomir, Lloyd Spetz, Anita, Yakimova, Rositsa
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2016
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5238641/
https://www.ncbi.nlm.nih.gov/pubmed/28144530
http://dx.doi.org/10.3762/bjnano.7.173

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5238641/
https://www.ncbi.nlm.nih.gov/pubmed/28144530
http://dx.doi.org/10.3762/bjnano.7.173

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