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Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals
A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emiss...
Autores principales: | Shtepliuk, Ivan, Eriksson, Jens, Khranovskyy, Volodymyr, Iakimov, Tihomir, Lloyd Spetz, Anita, Yakimova, Rositsa |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Beilstein-Institut
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5238641/ https://www.ncbi.nlm.nih.gov/pubmed/28144530 http://dx.doi.org/10.3762/bjnano.7.173 |
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