Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of second...

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Detalles Bibliográficos
Autores principales: Kleinschmidt, Ann-Kathrin, Barzen, Lars, Strassner, Johannes, Doering, Christoph, Fouckhardt, Henning, Bock, Wolfgang, Wahl, Michael, Kopnarski, Michael
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2016
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5238690/
https://www.ncbi.nlm.nih.gov/pubmed/28144528
http://dx.doi.org/10.3762/bjnano.7.171

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5238690/
https://www.ncbi.nlm.nih.gov/pubmed/28144528
http://dx.doi.org/10.3762/bjnano.7.171

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