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Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment
Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of second...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Beilstein-Institut
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5238690/ https://www.ncbi.nlm.nih.gov/pubmed/28144528 http://dx.doi.org/10.3762/bjnano.7.171 |