Observation of Anomalous Resistance Behavior in Bilayer Graphene

Our measurement results have shown that bilayer graphene exhibits an unexpected sharp transition of the resistance value in the temperature region 200~250 K. We argue that this behavior originates from the interlayer ripple scattering effect between the top and bottom ripple graphene layer. The inte...

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Detalles Bibliográficos
Autores principales: Liu, Yanping, Lew, Wen Siang, Liu, Zongwen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5241263/
https://www.ncbi.nlm.nih.gov/pubmed/28097601
http://dx.doi.org/10.1186/s11671-016-1792-z
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author Liu, Yanping
Lew, Wen Siang
Liu, Zongwen
author_facet Liu, Yanping
Lew, Wen Siang
Liu, Zongwen
author_sort Liu, Yanping
collection PubMed
description Our measurement results have shown that bilayer graphene exhibits an unexpected sharp transition of the resistance value in the temperature region 200~250 K. We argue that this behavior originates from the interlayer ripple scattering effect between the top and bottom ripple graphene layer. The inter-scattering can mimic the Coulomb scattering but is strongly dependent on temperature. The observed behavior is consistent with the theoretical prediction that charged impurities are the dominant scatters in bilayer graphene. The resistance increase with increasing perpendicular magnetic field strongly supports the postulate that magnetic field induces an excitonic gap in bilayer graphene. Our results reveal that the relative change of resistance induced by magnetic field in the bilayer graphene shows an anomalous thermally activated property.
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spelling pubmed-52412632017-01-25 Observation of Anomalous Resistance Behavior in Bilayer Graphene Liu, Yanping Lew, Wen Siang Liu, Zongwen Nanoscale Res Lett Nano Express Our measurement results have shown that bilayer graphene exhibits an unexpected sharp transition of the resistance value in the temperature region 200~250 K. We argue that this behavior originates from the interlayer ripple scattering effect between the top and bottom ripple graphene layer. The inter-scattering can mimic the Coulomb scattering but is strongly dependent on temperature. The observed behavior is consistent with the theoretical prediction that charged impurities are the dominant scatters in bilayer graphene. The resistance increase with increasing perpendicular magnetic field strongly supports the postulate that magnetic field induces an excitonic gap in bilayer graphene. Our results reveal that the relative change of resistance induced by magnetic field in the bilayer graphene shows an anomalous thermally activated property. Springer US 2017-01-17 /pmc/articles/PMC5241263/ /pubmed/28097601 http://dx.doi.org/10.1186/s11671-016-1792-z Text en © The Author(s). 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Liu, Yanping
Lew, Wen Siang
Liu, Zongwen
Observation of Anomalous Resistance Behavior in Bilayer Graphene
title Observation of Anomalous Resistance Behavior in Bilayer Graphene
title_full Observation of Anomalous Resistance Behavior in Bilayer Graphene
title_fullStr Observation of Anomalous Resistance Behavior in Bilayer Graphene
title_full_unstemmed Observation of Anomalous Resistance Behavior in Bilayer Graphene
title_short Observation of Anomalous Resistance Behavior in Bilayer Graphene
title_sort observation of anomalous resistance behavior in bilayer graphene
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5241263/
https://www.ncbi.nlm.nih.gov/pubmed/28097601
http://dx.doi.org/10.1186/s11671-016-1792-z
work_keys_str_mv AT liuyanping observationofanomalousresistancebehaviorinbilayergraphene
AT lewwensiang observationofanomalousresistancebehaviorinbilayergraphene
AT liuzongwen observationofanomalousresistancebehaviorinbilayergraphene

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