Metal-Insulator Transition of strained SmNiO(3) Thin Films: Structural, Electrical and Optical Properties

Samarium nickelate (SmNiO(3)) thin films were successfully synthesized on LaAlO(3) and SrTiO(3) substrates using pulsed-laser deposition. The Mott metal-insulator (MI) transition of the thin films is sensitive to epitaxial strain and strain relaxation. Once the strain changes from compressive to ten...

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Detalles Bibliográficos
Autores principales: Torriss, B., Margot, J., Chaker, M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5241880/
https://www.ncbi.nlm.nih.gov/pubmed/28098240
http://dx.doi.org/10.1038/srep40915
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author Torriss, B.
Margot, J.
Chaker, M.
author_facet Torriss, B.
Margot, J.
Chaker, M.
author_sort Torriss, B.
collection PubMed
description Samarium nickelate (SmNiO(3)) thin films were successfully synthesized on LaAlO(3) and SrTiO(3) substrates using pulsed-laser deposition. The Mott metal-insulator (MI) transition of the thin films is sensitive to epitaxial strain and strain relaxation. Once the strain changes from compressive to tensile, the transition temperature of the SmNiO(3) samples shifts to slightly higher values. The optical conductivity reveals the strong dependence of the Drude spectral weight on the strain relaxation. Actually, compressive strain broadens the bandwidth. In contrast, tensile strain causes the effective number of free carriers to reduce which is consistent with the d-band narrowing.
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spelling pubmed-52418802017-01-23 Metal-Insulator Transition of strained SmNiO(3) Thin Films: Structural, Electrical and Optical Properties Torriss, B. Margot, J. Chaker, M. Sci Rep Article Samarium nickelate (SmNiO(3)) thin films were successfully synthesized on LaAlO(3) and SrTiO(3) substrates using pulsed-laser deposition. The Mott metal-insulator (MI) transition of the thin films is sensitive to epitaxial strain and strain relaxation. Once the strain changes from compressive to tensile, the transition temperature of the SmNiO(3) samples shifts to slightly higher values. The optical conductivity reveals the strong dependence of the Drude spectral weight on the strain relaxation. Actually, compressive strain broadens the bandwidth. In contrast, tensile strain causes the effective number of free carriers to reduce which is consistent with the d-band narrowing. Nature Publishing Group 2017-01-18 /pmc/articles/PMC5241880/ /pubmed/28098240 http://dx.doi.org/10.1038/srep40915 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Torriss, B.
Margot, J.
Chaker, M.
Metal-Insulator Transition of strained SmNiO(3) Thin Films: Structural, Electrical and Optical Properties
title Metal-Insulator Transition of strained SmNiO(3) Thin Films: Structural, Electrical and Optical Properties
title_full Metal-Insulator Transition of strained SmNiO(3) Thin Films: Structural, Electrical and Optical Properties
title_fullStr Metal-Insulator Transition of strained SmNiO(3) Thin Films: Structural, Electrical and Optical Properties
title_full_unstemmed Metal-Insulator Transition of strained SmNiO(3) Thin Films: Structural, Electrical and Optical Properties
title_short Metal-Insulator Transition of strained SmNiO(3) Thin Films: Structural, Electrical and Optical Properties
title_sort metal-insulator transition of strained smnio(3) thin films: structural, electrical and optical properties
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5241880/
https://www.ncbi.nlm.nih.gov/pubmed/28098240
http://dx.doi.org/10.1038/srep40915
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