Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)

3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration sy...

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Detalles Bibliográficos
Autores principales: Shen, Wen-Wei, Chen, Kuan-Neng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5247381/
https://www.ncbi.nlm.nih.gov/pubmed/28105605
http://dx.doi.org/10.1186/s11671-017-1831-4
Descripción
Sumario:3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related failure modes, as well as other characterizations are discussed in this invited review paper.

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