Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)

3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration sy...

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Detalles Bibliográficos
Autores principales: Shen, Wen-Wei, Chen, Kuan-Neng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5247381/
https://www.ncbi.nlm.nih.gov/pubmed/28105605
http://dx.doi.org/10.1186/s11671-017-1831-4
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author Shen, Wen-Wei
Chen, Kuan-Neng
author_facet Shen, Wen-Wei
Chen, Kuan-Neng
author_sort Shen, Wen-Wei
collection PubMed
description 3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related failure modes, as well as other characterizations are discussed in this invited review paper.
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spelling pubmed-52473812017-02-02 Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV) Shen, Wen-Wei Chen, Kuan-Neng Nanoscale Res Lett Nano Review 3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related failure modes, as well as other characterizations are discussed in this invited review paper. Springer US 2017-01-19 /pmc/articles/PMC5247381/ /pubmed/28105605 http://dx.doi.org/10.1186/s11671-017-1831-4 Text en © The Author(s). 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Review
Shen, Wen-Wei
Chen, Kuan-Neng
Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)
title Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)
title_full Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)
title_fullStr Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)
title_full_unstemmed Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)
title_short Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)
title_sort three-dimensional integrated circuit (3d ic) key technology: through-silicon via (tsv)
topic Nano Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5247381/
https://www.ncbi.nlm.nih.gov/pubmed/28105605
http://dx.doi.org/10.1186/s11671-017-1831-4
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