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Silicon-graphene conductive photodetector with ultra-high responsivity
Graphene is attractive for realizing optoelectronic devices, including photodetectors because of the unique advantages. It can easily co-work with other semiconductors to form a Schottky junction, in which the photo-carrier generated by light absorption in the semiconductor might be transported to t...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5247717/ https://www.ncbi.nlm.nih.gov/pubmed/28106084 http://dx.doi.org/10.1038/srep40904 |
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author | Liu, Jingjing Yin, Yanlong Yu, Longhai Shi, Yaocheng Liang, Di Dai, Daoxin |
author_facet | Liu, Jingjing Yin, Yanlong Yu, Longhai Shi, Yaocheng Liang, Di Dai, Daoxin |
author_sort | Liu, Jingjing |
collection | PubMed |
description | Graphene is attractive for realizing optoelectronic devices, including photodetectors because of the unique advantages. It can easily co-work with other semiconductors to form a Schottky junction, in which the photo-carrier generated by light absorption in the semiconductor might be transported to the graphene layer efficiently by the build-in field. It changes the graphene conduction greatly and provides the possibility of realizing a graphene-based conductive-mode photodetector. Here we design and demonstrate a silicon-graphene conductive photodetector with improved responsivity and response speed. An electrical-circuit model is established and the graphene-sheet pattern is designed optimally for maximizing the responsivity. The fabricated silicon-graphene conductive photodetector shows a responsivity of up to ~10(5 )A/W at room temperature (27 °C) and the response time is as short as ~30 μs. The temperature dependence of the silicon-graphene conductive photodetector is studied for the first time. It is shown that the silicon-graphene conductive photodetector has ultra-high responsivity when operating at low temperature, which provides the possibility to detect extremely weak optical power. For example, the device can detect an input optical power as low as 6.2 pW with the responsivity as high as 2.4 × 10(7) A/W when operating at −25 °C in our experiment. |
format | Online Article Text |
id | pubmed-5247717 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-52477172017-01-23 Silicon-graphene conductive photodetector with ultra-high responsivity Liu, Jingjing Yin, Yanlong Yu, Longhai Shi, Yaocheng Liang, Di Dai, Daoxin Sci Rep Article Graphene is attractive for realizing optoelectronic devices, including photodetectors because of the unique advantages. It can easily co-work with other semiconductors to form a Schottky junction, in which the photo-carrier generated by light absorption in the semiconductor might be transported to the graphene layer efficiently by the build-in field. It changes the graphene conduction greatly and provides the possibility of realizing a graphene-based conductive-mode photodetector. Here we design and demonstrate a silicon-graphene conductive photodetector with improved responsivity and response speed. An electrical-circuit model is established and the graphene-sheet pattern is designed optimally for maximizing the responsivity. The fabricated silicon-graphene conductive photodetector shows a responsivity of up to ~10(5 )A/W at room temperature (27 °C) and the response time is as short as ~30 μs. The temperature dependence of the silicon-graphene conductive photodetector is studied for the first time. It is shown that the silicon-graphene conductive photodetector has ultra-high responsivity when operating at low temperature, which provides the possibility to detect extremely weak optical power. For example, the device can detect an input optical power as low as 6.2 pW with the responsivity as high as 2.4 × 10(7) A/W when operating at −25 °C in our experiment. Nature Publishing Group 2017-01-20 /pmc/articles/PMC5247717/ /pubmed/28106084 http://dx.doi.org/10.1038/srep40904 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Liu, Jingjing Yin, Yanlong Yu, Longhai Shi, Yaocheng Liang, Di Dai, Daoxin Silicon-graphene conductive photodetector with ultra-high responsivity |
title | Silicon-graphene conductive photodetector with ultra-high responsivity |
title_full | Silicon-graphene conductive photodetector with ultra-high responsivity |
title_fullStr | Silicon-graphene conductive photodetector with ultra-high responsivity |
title_full_unstemmed | Silicon-graphene conductive photodetector with ultra-high responsivity |
title_short | Silicon-graphene conductive photodetector with ultra-high responsivity |
title_sort | silicon-graphene conductive photodetector with ultra-high responsivity |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5247717/ https://www.ncbi.nlm.nih.gov/pubmed/28106084 http://dx.doi.org/10.1038/srep40904 |
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