Cargando…

Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfO(x)/ZnO(x)/TiN Memristive System

In this work, a kind of new memristor with the simple structure of Pt/HfO(x)/ZnO(x)/TiN was fabricated completely via combination of thermal-atomic layer deposition (TALD) and plasma-enhanced ALD (PEALD). The synaptic plasticity and learning behaviors of Pt/HfO(x)/ZnO(x)/TiN memristive system have b...

Descripción completa

Detalles Bibliográficos
Autores principales:	Wang, Lai-Guo, Zhang, Wei, Chen, Yan, Cao, Yan-Qiang, Li, Ai-Dong, Wu, Di
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2017
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5256630/ https://www.ncbi.nlm.nih.gov/pubmed/28116612 http://dx.doi.org/10.1186/s11671-017-1847-9

Ejemplares similares

HfO(x)/AlO(y) Superlattice‐Like Memristive Synapse
por: Wang, Chengxu, et al.
Publicado: (2022)

HfO(x)/AlO(y) Superlattice‐Like Memristive Synapse (Adv. Sci. 21/2022)
por: Wang, Chengxu, et al.
Publicado: (2022)

Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
por: Zhang, Wei, et al.
Publicado: (2017)

Crossbar Nanoscale HfO(2)-Based Electronic Synapses
por: Matveyev, Yury, et al.
Publicado: (2016)

TiN/Ti/HfO(2)/TiN memristive devices for neuromorphic computing: from synaptic plasticity to stochastic resonance
por: Maldonado, David, et al.
Publicado: (2023)

Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta(2)O(5)/HfO(2-x)/Hf Stack
por: Ma, Haili, et al.
Publicado: (2017)

Resistive switching of the HfO(x)/HfO(2) bilayer heterostructure and its transmission characteristics as a synapse
por: Tan, Tingting, et al.
Publicado: (2018)

Synthesis and White-Light Emission of ZnO/HfO(2): Eu Nanocables
por: Liu, Lixin, et al.
Publicado: (2010)

Retention Model of TaO/HfO(x) and TaO/AlO(x) RRAM with Self-Rectifying Switch Characteristics
por: Lin, Yu-De, et al.
Publicado: (2017)

Effect of Ag Concentration Dispersed in HfO(x) Thin Films on Threshold Switching
por: Jeong, Won Hee, et al.
Publicado: (2020)

Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO(2)/TaO(x)/TiN Artificial Synaptic Device
por: Ryu, Hojeong, et al.
Publicado: (2020)

Synthesis of freestanding HfO(2 )nanostructures
por: Kidd, Timothy, et al.
Publicado: (2011)

Statistical characteristics of reset switching in Cu/HfO(2)/Pt resistive switching memory
por: Zhang, Meiyun, et al.
Publicado: (2014)

Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO(2) Film
por: Peng, Yue, et al.
Publicado: (2022)

Multilayer redox-based HfO(x)/Al(2)O(3)/TiO(2) memristive structures for neuromorphic computing
por: Park, Seongae, et al.
Publicado: (2022)

In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO(2)/TiN Structure for CMOS Applications
por: Xu, Da-Peng, et al.
Publicado: (2017)

Impact of electrically formed interfacial layer and improved memory characteristics of IrO(x)/high-κ(x)/W structures containing AlO(x), GdO(x), HfO(x), and TaO(x) switching materials
por: Prakash, Amit, et al.
Publicado: (2013)

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO(2)/Pt RRAM Device
por: Zhang, Meiyun, et al.
Publicado: (2016)

Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO(2)/Pt Resistive Switching Memory
por: Li, Leilei, et al.
Publicado: (2017)

Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfO(x) bilayer memristive device for neuromorphic computing
por: Sahu, Dwipak Prasad, et al.
Publicado: (2023)

Low-Power Resistive Switching Characteristic in HfO(2)/TiO(x) Bi-Layer Resistive Random-Access Memory
por: Ding, Xiangxiang, et al.
Publicado: (2019)

Morphology and Photoluminescence of HfO(2)Obtained by Microwave-Hydrothermal
por: Eliziário, SA, et al.
Publicado: (2009)

Author Correction: Multilayer redox-based HfO(x)/Al(2)O(3)/TiO(2) memristive structures for neuromorphic computing
por: Park, Seongae, et al.
Publicado: (2022)

Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO(2)) Devices via Sol-Gel Method Stacking Tri-Layer HfO(2)/Al-ZnO/HfO(2) Structures
por: Xu, Yuan-Dong, et al.
Publicado: (2022)

III-Nitride grating grown on freestanding HfO(2 )gratings
por: Wang, Yongjin, et al.
Publicado: (2011)

Direct Observation of Structural Deformation Immunity for Understanding Oxygen Plasma Treatment-Enhanced Resistive Switching in HfO(x)-Based Memristive Devices
por: Wang, Dong, et al.
Publicado: (2019)

High-performance HfO(x)/AlO(y)-based resistive switching memory cross-point array fabricated by atomic layer deposition
por: Chen, Zhe, et al.
Publicado: (2015)

Self-Compliance and High Performance Pt/HfO(x)/Ti RRAM Achieved through Annealing
por: Wu, Lei, et al.
Publicado: (2020)

Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism
por: Zhang, Xiao-Ying, et al.
Publicado: (2019)

Freestanding HfO(2 )grating fabricated by fast atom beam etching
por: Wang, Yongjin, et al.
Publicado: (2011)

Investigation of Nitridation on the Band Alignment at MoS(2)/HfO(2) Interfaces
por: Huan, Ya-Wei, et al.
Publicado: (2019)

Artificial HfO(2)/TiO(x) Synapses with Controllable Memory Window and High Uniformity for Brain-Inspired Computing
por: Yang, Yang, et al.
Publicado: (2023)

The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfO(x)/W Bilayer-Structured Memory Device
por: Noh, Minseo, et al.
Publicado: (2023)

Conduction Mechanism and Improved Endurance in HfO(2)-Based RRAM with Nitridation Treatment
por: Yuan, Fang-Yuan, et al.
Publicado: (2017)

ZnO-porous silicon nanocomposite for possible memristive device fabrication
por: Martínez, Lizeth, et al.
Publicado: (2014)

Pseudo-Interface Switching of a Two-Terminal TaO(x)/HfO(2) Synaptic Device for Neuromorphic Applications
por: Ryu, Hojeong, et al.
Publicado: (2020)

A Multi-level Memristor Based on Al-Doped HfO(2) Thin Film
por: Wu, Lei, et al.
Publicado: (2019)

Gadolinium oxide nanocrystal nonvolatile memory with HfO(2)/Al(2)O(3 )nanostructure tunneling layers
por: Wang, Jer-Chyi, et al.
Publicado: (2012)

Handwritten-Digit Recognition by Hybrid Convolutional Neural Network based on HfO(2) Memristive Spiking-Neuron
por: Wang, J. J., et al.
Publicado: (2018)

Immobilization of enzyme and antibody on ALD-HfO(2)-EIS structure by NH(3 )plasma treatment
por: Wang, I-Shun, et al.
Publicado: (2012)

Cannot write session to /tmp/vufind_sessions/sess_calr034eguhijt7vhsgfm7fm8d