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Charge transport in nanoscale vertical organic semiconductor pillar devices

We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene) (P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nan...

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Autores principales: Wilbers, Janine G. E., Xu, Bojian, Bobbert, Peter A., de Jong, Michel P., van der Wiel, Wilfred G.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5259728/
https://www.ncbi.nlm.nih.gov/pubmed/28117371
http://dx.doi.org/10.1038/srep41171
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author Wilbers, Janine G. E.
Xu, Bojian
Bobbert, Peter A.
de Jong, Michel P.
van der Wiel, Wilfred G.
author_facet Wilbers, Janine G. E.
Xu, Bojian
Bobbert, Peter A.
de Jong, Michel P.
van der Wiel, Wilfred G.
author_sort Wilbers, Janine G. E.
collection PubMed
description We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene) (P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to 10(6) A/m(2)). Current-voltage data modeling demonstrates excellent hole injection. This work opens up the pathway towards nanoscale, ultrashort-channel organic transistors for high-frequency and high-current-density operation.
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spelling pubmed-52597282017-01-24 Charge transport in nanoscale vertical organic semiconductor pillar devices Wilbers, Janine G. E. Xu, Bojian Bobbert, Peter A. de Jong, Michel P. van der Wiel, Wilfred G. Sci Rep Article We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene) (P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to 10(6) A/m(2)). Current-voltage data modeling demonstrates excellent hole injection. This work opens up the pathway towards nanoscale, ultrashort-channel organic transistors for high-frequency and high-current-density operation. Nature Publishing Group 2017-01-24 /pmc/articles/PMC5259728/ /pubmed/28117371 http://dx.doi.org/10.1038/srep41171 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Wilbers, Janine G. E.
Xu, Bojian
Bobbert, Peter A.
de Jong, Michel P.
van der Wiel, Wilfred G.
Charge transport in nanoscale vertical organic semiconductor pillar devices
title Charge transport in nanoscale vertical organic semiconductor pillar devices
title_full Charge transport in nanoscale vertical organic semiconductor pillar devices
title_fullStr Charge transport in nanoscale vertical organic semiconductor pillar devices
title_full_unstemmed Charge transport in nanoscale vertical organic semiconductor pillar devices
title_short Charge transport in nanoscale vertical organic semiconductor pillar devices
title_sort charge transport in nanoscale vertical organic semiconductor pillar devices
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5259728/
https://www.ncbi.nlm.nih.gov/pubmed/28117371
http://dx.doi.org/10.1038/srep41171
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