Effect of electric and magnetic fields on impurity binding energy in zinc-blend symmetric InGaN/GaN multiple quantum dots

The binding energy of ground state for hydrogenic impurity in multiple quantum dots is calculated in the framework of effective-mass approximation and using a variational method. It is shown that the binding energy is a function of the size of dots, impurity position and external fields strength. Th...

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Detalles Bibliográficos
Autores principales: Sadeghi, Ebrahim, Naghdi, Elham
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Korea Nano Technology Research Society 2014
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5271137/
https://www.ncbi.nlm.nih.gov/pubmed/28191404
http://dx.doi.org/10.1186/s40580-014-0025-3
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author Sadeghi, Ebrahim
Naghdi, Elham
author_facet Sadeghi, Ebrahim
Naghdi, Elham
author_sort Sadeghi, Ebrahim
collection PubMed
description The binding energy of ground state for hydrogenic impurity in multiple quantum dots is calculated in the framework of effective-mass approximation and using a variational method. It is shown that the binding energy is a function of the size of dots, impurity position and external fields strength. The binding energy has a maximum value when the impurity is located on the center of dots and decreases for other impurity positions. The external electric and magnetic fields change the magnitude and the position of peaks. PACS Codes 73.20.D; 71.21.La; 71.55.Eq
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spelling pubmed-52711372017-02-09 Effect of electric and magnetic fields on impurity binding energy in zinc-blend symmetric InGaN/GaN multiple quantum dots Sadeghi, Ebrahim Naghdi, Elham Nano Converg Research The binding energy of ground state for hydrogenic impurity in multiple quantum dots is calculated in the framework of effective-mass approximation and using a variational method. It is shown that the binding energy is a function of the size of dots, impurity position and external fields strength. The binding energy has a maximum value when the impurity is located on the center of dots and decreases for other impurity positions. The external electric and magnetic fields change the magnitude and the position of peaks. PACS Codes 73.20.D; 71.21.La; 71.55.Eq Korea Nano Technology Research Society 2014-09-03 2014 /pmc/articles/PMC5271137/ /pubmed/28191404 http://dx.doi.org/10.1186/s40580-014-0025-3 Text en © Sadeghi and Naghdi; licensee Springer 2014 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Research
Sadeghi, Ebrahim
Naghdi, Elham
Effect of electric and magnetic fields on impurity binding energy in zinc-blend symmetric InGaN/GaN multiple quantum dots
title Effect of electric and magnetic fields on impurity binding energy in zinc-blend symmetric InGaN/GaN multiple quantum dots
title_full Effect of electric and magnetic fields on impurity binding energy in zinc-blend symmetric InGaN/GaN multiple quantum dots
title_fullStr Effect of electric and magnetic fields on impurity binding energy in zinc-blend symmetric InGaN/GaN multiple quantum dots
title_full_unstemmed Effect of electric and magnetic fields on impurity binding energy in zinc-blend symmetric InGaN/GaN multiple quantum dots
title_short Effect of electric and magnetic fields on impurity binding energy in zinc-blend symmetric InGaN/GaN multiple quantum dots
title_sort effect of electric and magnetic fields on impurity binding energy in zinc-blend symmetric ingan/gan multiple quantum dots
topic Research
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5271137/
https://www.ncbi.nlm.nih.gov/pubmed/28191404
http://dx.doi.org/10.1186/s40580-014-0025-3
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